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首頁 >ASNT5175-PQC>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
BX5175	文件：73.67 Kbytes Page：1 Pages	RFAMPLIFIERMODEL	APITECH API Technologies Corp	APITECH
C5175G	文件：880.27 Kbytes Page：2 Pages	5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT	POWERBOX Powerbox manufactures	POWERBOX
C5175K	文件：880.27 Kbytes Page：2 Pages	5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT	POWERBOX Powerbox manufactures	POWERBOX
C5175V	文件：880.27 Kbytes Page：2 Pages	5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT	POWERBOX Powerbox manufactures	POWERBOX
CEB5175	文件：503.67 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB5175	文件：683.38 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED5175	文件：274 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-40A,RDS(ON)=23m?@VGS=-10V. RDS(ON)=28m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED5175	文件：269.98 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-40A,RDS(ON)=23mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=28mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP5175	文件：503.67 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP5175	文件：683.38 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU5175	文件：274 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-40A,RDS(ON)=23m?@VGS=-10V. RDS(ON)=28m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU5175	文件：269.98 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-40A,RDS(ON)=23mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=28mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEZ5175	文件：535.62 Kbytes Page：5 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-48A,RDS(ON)=23mW@VGS=-10V. RDS(ON)=28mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
EL5175	文件：753.55 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
EL5175	文件：337.26 Kbytes Page：16 Pages	550MHzDifferentialLineReceivers	Intersil Intersil Corporation	Intersil
EL5175	文件：441.12 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	Intersil Intersil Corporation	Intersil
EL5175IS	文件：441.12 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	Intersil Intersil Corporation	Intersil
EL5175IS	文件：337.26 Kbytes Page：16 Pages	550MHzDifferentialLineReceivers	Intersil Intersil Corporation	Intersil
EL5175IS	文件：753.55 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
EL5175ISZ	文件：753.55 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
千層芯半導(dǎo)體(深圳)有限公司	ASNT5175-PQC	adsantec	24+	模塊	400		詢價(jià)
深圳市達(dá)恩科技有限公司	ASNT6163-KHC	ADVANCED SCIENCE AND NOVEL TEC	22+	N/A	122	原裝原裝原裝	詢價(jià)
深圳市冠億通科技有限公司	ASNT6170-KMC	ADSANTEC	21+		25000	原廠原包深圳現(xiàn)貨主打品牌假一賠百可開票!	詢價(jià)
深圳市明嘉萊科技有限公司	ASNT6193-KHC	ADVANCED SCIENCE AND NOVEL TEC	22+	SMD	518000	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)

更多ASNT5175-PQC供應(yīng)商更新時(shí)間2025-1-3 16:20:00

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