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ATFC106D

DigitalTEC/FanController

FEATURES DigitalDisplayforParameterSettingandMonitoring HighOutputPowerforTEC:12V20A HighEfficiency:>98% NoHeatSinkRequired PenalMountingDesign OverCurrentProtected CommunicationFunction CompactSize:152.6mm(L)×76.0mm(W)×20.4mm(H) DESCRIPTION ATFC106Disdesig

ANALOGTECHNOLOGIES

Analog Technologies, Inc.

ATP106

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features ?LowON-resistance ?Slimpackage ?Halogenfreecompliance ?Largecurrent ?4.5Vdrive ?Protectiondiodein

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

ATP106

P-ChannelPowerMOSFET

P-ChannelPowerMOSFET –40V,–30A,25mΩ,SingleATPAK Features ?LowON-resistance ?Slimpackage ?Halogenfreecompliance ?Largecurrent ?4.5Vdrive ?Protectiondiodein

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

ATP106-TL-H

General-PurposeSwitchingDeviceApplications

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

ATP106-TL-H

P-ChannelPowerMOSFET

P-ChannelPowerMOSFET –40V,–30A,25mΩ,SingleATPAK Features ?LowON-resistance ?Slimpackage ?Halogenfreecompliance ?Largecurrent ?4.5Vdrive ?Protectiondiodein

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

AU106

GERMANIUMPOWERTRANSISTORS

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

AUMSCD106H

SchottkyBarrierDiode

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

AUSSCD106H

SchottkyBarrierDiode

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

B106B

SMOKEDETECTORS

SYSTEMSENSOR

Systemsensor advanced ideas.

B106BR

SMOKEDETECTORS

SYSTEMSENSOR

Systemsensor advanced ideas.

B106S

MINISURFACEMOUNTGLASSPASSIVATEDSINGLE-PHASEBRIDGERECTIFIER

FEATURES ?PlasticmaterialusedcarriesUnderwritersLaboratoryrecognition94V-O ?Lowleakage ?Surgeoverloadrating--30amperespeak ?Idealforprintedcircuitboard ?LeadfreeincompliancewithEURoHS2011/65/EUdirective MECHANICALDATA ?Case:Reliablelowcostconstructionut

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

BB106A

SilicljeveplanarnesignalnediodeSiliconplanarsignaldiodes

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BDB106

SINGLE-PHASEGLASSPASSIVATEDSILICONBRIDGERECTIFIER

RECTRON

Rectron Semiconductor

BFR106

NPN5GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplasticSOT23envelope.Itisprimarilyintendedforlownoise,generalRFapplications.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFR106

NPNSiliconRFTransistor(Forlownoise,high-gainamplifiersForlinearbroadbandamplifiers)

NPNSiliconRFTransistor ?Forlownoise,high-gainamplifiers ?Forlinearbroadbandamplifiers ?Specialapplication:antennaamplifiers ?Complementarytype:BFR194(PNP)

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFR106

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?HighlinearitylownoiseRFtransistor ?22dBmOP1dBand31dBmOIP3@900MHz,8V,70mA ?ForUHF/VHFapplications ?Driverformultistageamplifiers ?Forlinearbroadbandandantennaamplifiers ?Collectordesignsupports5Vsupplyvoltage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR106

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR106

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR106

SiliconNPNRFTransistor

DESCRIPTION ?LowNoiseFigure NF=2.5dBTYP.@VCE=8V,IC=20mA,f=900MHz ?HighGain ︱S21e︱2=10.5dBTYP.@VCE=8V,IC=70mA,f=900MHz APPLICATIONS ?Designedforuseinlownoise,high-gainamplifiersandlinearbroadbandamplifiers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BFR106

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

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20+
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1000
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22+
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1000
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NA
8600
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M/A-COM
2308+
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4285
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Hirose
20+
SMA
960
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Hirose
2020+
N/A
50
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155
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50
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9390
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HIROSE ELECTRIC
2022+
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8600
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更多AT-106TR供應(yīng)商 更新時(shí)間2025-1-11 10:18:00