AT25DF041B集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

Features ? Single 1.65 V - 3.6 V Supply (-40 °C to +85 °C)

? Single 1.7 V - 3.6 V Supply (-40 °C to +125 °C)

? Serial Peripheral Interface (SPI) Compatible

? Supports SPI Modes 0 and 3

? Supports Dual-I/O Operation

? 104 MHz Maximum Operating Frequency

? Clock-to-Output (tV) of 6 ns

? Flexible, Optimized Erase Architecture for Code + Data Storage Applications

? Small (256-byte) Page Erase

? Uniform 4-kByte Block Erase

? Uniform 32-kByte Block Erase

? Uniform 64-kByte Block Erase

? Full Chip Erase

? Hardware Controlled Locking of Protected Sectors via WP Pin

? 128-Byte Programmable OTP Security Register

? 64 bytes Factory Programmed with a Unique Identifier

? 64 bytes User-Programmable

? Flexible Programming

? Byte/Page Program (1 to 256 Bytes)

? Dual-Input Byte/Page Program (1 to 256 Bytes)

? Sequential Program Mode Capability

? Fast Program and Erase Times

? 1.25 ms Typical Page Program (256 Bytes) Time

? 35 ms Typical 4-kByte Block Erase Time

? 250 ms Typical 32-kByte Block Erase Time

? 450 ms Typical 64-kByte Block Erase Time

? Automatic Checking and Reporting of Erase/Program Failures

? Software Controlled Reset

? JEDEC Standard Manufacturer and Device ID Read Methodology

? Low Power Dissipation

? 200 nA Ultra Deep Power Down current (Typical)

? 5 μA Deep Power-Down Current (Typical)

? 25 μA Standby current (Typical)

? 5 mA Active Read Current (Typical)

? Endurance:

? 100,000 Program/Erase Cycles (-40 °C to +85 °C)

? 20,000 Program/Erase Cycles (-40 °C to +125 °C)

? Data Retention: 20 Years

? Complies with Full Industrial Temperature Range

? Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options

? 8-lead SOIC (150-mil)

? 8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)

? 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)

? 8-lead TSSOP

? 8-ball WLCSP

? Die in Wafer Form (DWF)

Description

The AT25DF041B is a serial interface Flash memory device designed for use in a wide variety of high-volume

consumer based applications in which program code is shadowed from Flash memory into embedded or external

RAM for execution. The flexible erase architecture of the AT25DF041B, with its page erase granularity it is ideal

for data storage as well, eliminating the need for additional data storage devices.

The erase block sizes of the AT25DF041B have been optimized to meet the needs of today's code and data

storage applications. By optimizing the size of the erase blocks, the memory space can be used much more

efficiently. Because certain code modules and data storage segments must reside by themselves in their own

erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash

memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines

and data storage segments to be added while still maintaining the same overall device density.

The device also contains a specialized OTP (One-Time Programmable) Security Register that can be used for

purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key

storage, etc.

Specifically designed for use in many different systems, the AT25DF041B supports read, program, and erase

operations with a wide supply voltage range of 1.65 V to 3.6 V. No separate voltage is required for programming

and erasing.