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AT25DF641A集成電路(IC)的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

AT25DF641A
廠商型號(hào)

AT25DF641A

參數(shù)屬性

AT25DF641A 封裝/外殼為8-UDFN 裸露焊盤;包裝為托盤;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC FLASH 64MBIT SPI 100MHZ 8UDFN

功能描述

64-Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual–I/O Support

封裝外殼

8-UDFN 裸露焊盤

文件大小

2.40969 Mbytes

頁(yè)面數(shù)量

57 頁(yè)

生產(chǎn)廠商 Renesas Technology Corp
企業(yè)簡(jiǎn)稱

RENESAS瑞薩

中文名稱

瑞薩科技有限公司官網(wǎng)

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更新時(shí)間

2025-2-19 18:31:00

AT25DF641A規(guī)格書(shū)詳情

Features

? Single 2.7V - 3.6V supply

? Serial Peripheral Interface (SPI) compatible

? Supports SPI Modes 0 and 3

? Supports RapidS? operation

? Supports Dual-Input Program and Dual-Output Read

? Very high operating frequencies

? 100MHz for RapidS

? 85MHz for SPI

? Clock-to-output time (tV) of 5ns maximum

? Flexible, optimized erase architecture for code + data storage applications

? Uniform 4KB, 32KB, and 64KB Block Erase

? Full Chip Erase

? Individual sector protection with Global Protect/Unprotect feature

? 128 Sectors of 64KB each

? Hardware controlled locking of protected sectors via WP pin

? Sector Lockdown

? Make any combination of 64KB sectors permanently read-only

? 128-byte One-Time Programmable (OTP) Security Register

? 64 bytes factory preprogrammed

? 64 bytes user programmable

? Flexible programming

? Byte/Page Program (1 to 256 bytes)

? Fast program and erase times

? 2.5ms typical Page Program (256 bytes) time

? 75ms typical 4KB Block Erase time

? 300ms typical 32KB Block Erase time

? 600ms typical 64KB Block Erase time

? Program and Erase Suspend/Resume

? Automatic checking and reporting of erase/program failures

? Software controlled reset

? JEDEC Standard Manufacturer and Device ID Read Methodology

? Low power dissipation

? 25mA Active Read current (typical at 20MHz)

? 5μA Deep Power-Down current (typical)

? Endurance: 100,000 program/erase cycles

? Data retention: 20 years

? Complies with full industrial temperature range

? Industry standard green (Pb/Halide-free/RoHS compliant) package options

? 8-lead SOIC (0.208” wide)

? 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

Description

The AT25DF641A is a 2.7V minimum, serial-interface Flash memory ideally suited for a wide variety of

high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or

external RAM for execution. The flexible erase architecture of the AT25DF641A, with its erase granularity as small as

4KB, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices.

The physical sectoring and the erase block sizes of the AT25DF641A have been optimized to meet the needs of today's

code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space

can be used much more efficiently. Because certain code modules and data storage segments must reside by

themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and

large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows

additional code routines and data storage segments to be added while still maintaining the same overall device density.

The AT25DF641A also offers a sophisticated method for protecting individual sectors against erroneous or malicious

program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can

unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely

protected. This is useful in applications where program code is patched or updated on a subroutine or module basis, or in

applications where data storage segments need to be modified without running the risk of errant modifications to the

program code segments. In addition to individual sector protection capabilities, the AT25DF641A incorporates Global

Protect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at

once. This reduces overhead during the manufacturing process since sectors do not have to be unprotected one by one

prior to initial programming.

To take code and data protection to the next level, the AT25DF641A incorporates a sector lockdown mechanism that

allows any combination of individual 64KB sectors to be locked down and become permanently read-only. This

addresses the need of certain secure applications that require portions of the Flash memory array to be permanently

protected against malicious attempts at altering program code, data modules, security information or

encryption/decryption algorithms, keys, and routines. The device also contains a specialized OTP (One-Time

Programmable) Security Register that can be used for purposes such as unique device serialization, system-level

Electronic Serial Number (ESN) storage, locked key storage, or other purposes.

Specifically designed for use in 3V systems, the AT25DF641A supports read, program, and erase operations with a

supply voltage range of 2.7V to 3.6V. No separate voltage is required for programming and erasing.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    AT25DF641A-MH-Y

  • 制造商:

    Adesto Technologies

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    非易失

  • 存儲(chǔ)器格式:

    閃存

  • 技術(shù):

    閃存

  • 存儲(chǔ)容量:

    64Mb(256 字節(jié) x 32K 頁(yè))

  • 存儲(chǔ)器接口:

    SPI

  • 寫周期時(shí)間 - 字,頁(yè):

    30μs,6ms

  • 電壓 - 供電:

    2.7V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TC)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    8-UDFN 裸露焊盤

  • 供應(yīng)商器件封裝:

    8-UDFN(5x6)

  • 描述:

    IC FLASH 64MBIT SPI 100MHZ 8UDFN

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