AT25SF081集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

Features

? Single 2.3V - 3.6V Supply

? Serial Peripheral Interface (SPI) Compatible

? Supports SPI Modes 0 and 3

? Supports Dual and Quad Output Read

? 104MHz Maximum Operating Frequency

? Clock-to-Output (tV) of 6 ns

? Flexible, Optimized Erase Architecture for Code + Data Storage Applications

? Uniform 4-Kbyte Block Erase

? Uniform 32-Kbyte Block Erase

? Uniform 64-Kbyte Block Erase

? Full Chip Erase

? Hardware Controlled Locking of Protected Blocks via WP Pin

? 3 Protected Programmable Security Register Pages

? Flexible Programming

? Byte/Page Program (1 to 256 Bytes)

? Fast Program and Erase Times

? 0.7ms Typical Page Program (256 Bytes) Time

? 70ms Typical 4-Kbyte Block Erase Time

? 300ms Typical 32-Kbyte Block Erase Time

? 600ms Typical 64-Kbyte Block Erase Time

? JEDEC Standard Manufacturer and Device ID Read Methodology

? Low Power Dissipation

? 2μA Deep Power-Down Current (Typical)

? 10μA Standby current (Typical)

? 4mA Active Read Current (Typical)

? Endurance: 100,000 Program/Erase Cycles

? Data Retention: 20 Years

? Complies with Full Industrial Temperature Range

? Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options

? 8-lead SOIC (150-mil and 208-mil)

? 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm and 2 x 3 x 0.6 mm)

? 8-lead TSSOP (4 x 4 mm)

? Die in Wafer Form

Description

The Adesto? AT25SF081 is a serial interface Flash memory device designed for use in a wide variety of high-volume

consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM

for execution. The flexible erase architecture of the AT25SF081 is ideal for data storage as well, eliminating the need for

additional data storage devices.

The erase block sizes of the AT25SF081 have been optimized to meet the needs of today's code and data storage

applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because

certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and

unused memory space that occurs with large block erase Flash memory devices can be greatly reduced. This increased

memory space efficiency allows additional code routines and data storage segments to be added while still maintaining

the same overall device density.

The device also contains three pages of Security Register that can be used for purposes such as unique device

serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. These Security Register

pages can be individually locked.