AT28BV16-30TC集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

Description

The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory

organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology.

The AT28BV16 is accessed like a static RAM for the read or write cycles without the need of external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The end of a write cycle can be determined by DATA poll ing of I/O7. Once the end of a write cycle has been detected, a new access for a read or a write can begin.

The CMOS technology offers fast access times of 250 ns at low power dissipation. When the chip is deselected the standby current is less than 50 μA.

Atmel’s 28BV16 has additional features to ensure high quality and manufacturability. The device utilizes error correction internally for extended endurance and for improved data retention characteristics. An extra 32-bytes of EEPROM are available for device identification or tracking.

Features

? 2.7 to 3.6V Supply

– Full Read and Write Operation

? Low Power Dissipation

– 8 mA Active Current

– 50 μA CMOS Standby Current

? Read Access Time - 250 ns

? Byte Write - 3 ms

? Direct Microprocessor Control

– DATA Polling

– READ/BUSY Open Drain Output on TSOP

? High Reliability CMOS Technology

– Endurance: 100,000 Cycles

– Data Retention: 10 Years

? Low Voltage CMOS Compatible Inputs and Outputs

? JEDEC Approved Byte Wide Pinout

? Commercial and Industrial Temperature Ranges