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AT28C040-20BI

4-Megabit 512K x 8 Paged E2PROM

Description TheAT28C040isahigh-performanceelectricallyerasableandprogrammablereadonlymemory(E2PROM).Its4megabitsofmemoryisorganizedas524,288wordsby8bits.ManufacturedwithAtmelsadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdis

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C040-20BISL703

4-Megabit 512K x 8 Paged E2PROM

Description TheAT28C040isahigh-performanceelectricallyerasableandprogrammablereadonlymemory(E2PROM).Its4megabitsofmemoryisorganizedas524,288wordsby8bits.ManufacturedwithAtmelsadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdis

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C040-20FC

4-Megabit512Kx8PagedE2PROM

Description TheAT28C040isahigh-performanceelectricallyerasableandprogrammablereadonlymemory(E2PROM).Its4megabitsofmemoryisorganizedas524,288wordsby8bits.ManufacturedwithAtmelsadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdis

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C040-20FI

4-Megabit(512Kx8)PagedParallelEEPROMs

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C040-20FI

4-Megabit(512Kx8)PagedParallelEEPROMs

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C040-20FI

4-Megabit512Kx8PagedE2PROM

Description TheAT28C040isahigh-performanceelectricallyerasableandprogrammablereadonlymemory(E2PROM).Its4megabitsofmemoryisorganizedas524,288wordsby8bits.ManufacturedwithAtmelsadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdis

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C040-20LC

4-Megabit512Kx8PagedE2PROM

Description TheAT28C040isahigh-performanceelectricallyerasableandprogrammablereadonlymemory(E2PROM).Its4megabitsofmemoryisorganizedas524,288wordsby8bits.ManufacturedwithAtmelsadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdis

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C040-20LI

4-Megabit(512Kx8)PagedParallelEEPROMs

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C040-20LI

4-Megabit512Kx8PagedE2PROM

Description TheAT28C040isahigh-performanceelectricallyerasableandprogrammablereadonlymemory(E2PROM).Its4megabitsofmemoryisorganizedas524,288wordsby8bits.ManufacturedwithAtmelsadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdis

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C040-20LI

4-Megabit(512Kx8)PagedParallelEEPROMs

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C040-20TI

4-Megabit(512Kx8)PagedParallelEEPROMs

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

XM28C040-20

5Volt,ByteAlterableE2PROM

DESCRIPTION TheXM28C040isahighdensity4MegabitE2PROMcomprisedoffourX28C010smountedonaco-firedmultilayeredceramicsubstrate.Individualcomponentsare100testedpriortoassemblyinmoduleformandthen100testedafterassembly. TYPICALFEATURES ?HighDensity4Megabit(512K

Xicor

Xicor Inc.

詳細參數(shù)

  • 型號:

    AT28C040-20BI

  • 功能描述:

    電可擦除可編程只讀存儲器 4M SDP - 200NS SIDEBRAZE IND TEMP

  • RoHS:

  • 制造商:

    Atmel

  • 存儲容量:

    2 Kbit

  • 組織:

    256 B x 8

  • 數(shù)據(jù)保留:

    100 yr

  • 最大時鐘頻率:

    1000 KHz

  • 最大工作電流:

    6 uA

  • 工作電源電壓:

    1.7 V to 5.5 V

  • 最大工作溫度:

    + 85 C

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-8

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更多AT28C040-20BI供應商 更新時間2024-12-25 16:30:00