AT28C16E-15SI集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

Description

The AT28C16 is a low-power, high-performance Electrically Erasable and Program

mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory

organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable

nonvolatile CMOS technology.

The AT28C16 is accessed like a static RAM for the read or write cycles without the need of external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The end of a write cycle can be determined by DATA POLLING of I/O7. Once the end of a write cycle has been detected, a new access for a read or a write can begin.

The CMOS technology offers fast access times of 150 ns at low power dissipation. When the chip is deselected the standby current is less than 100 μA.

Atmel’s 28C16 has additional features to ensure high quality and manufacturability. The device utilizes error correction internally for extended endurance and for improved data retention characteristics. An extra 32 bytes of EEPROM are available for device identification or tracking.

Features

? Fast Read Access Time - 150 ns

? Fast Byte Write - 200 μs or 1 ms

? Self-Timed Byte Write Cycle

– Internal Address and Data Latches

– Internal Control Timer

– Automatic Clear Before Write

? Direct Microprocessor Control

– DATA POLLING

? Low Power

– 30 mA Active Current

– 100 μA CMOS Standby Current

? High Reliability

– Endurance: 104 or 105 Cycles

– Data Retention: 10 Years

? 5V ± 10 Supply

? CMOS & TTL Compatible Inputs and Outputs

? JEDEC Approved Byte Wide Pinout

? Commercial and Industrial Temperature Ranges