AT28C64B-25中文資料愛特梅爾數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description

The AT28C64B is a high-performance electrically-erasable and programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 100 μA.

Features

? Fast Read Access Time – 150 ns

? Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

? Fast Write Cycle Times

– Page Write Cycle Time: 10 ms Maximum (Standard) 2 ms Maximum (Option – Ref. AT28HC64BF Datasheet)

– 1 to 64-byte Page Write Operation

? Low Power Dissipation

– 40 mA Active Current

– 100 μA CMOS Standby Current

? Hardware and Software Data Protection

? DATAPolling and Toggle Bit for End of Write Detection

? High Reliability CMOS Technology

– Endurance: 100,000 Cycles

– Data Retention: 10 Years

? Single 5V ±10 Supply

? CMOS and TTL Compatible Inputs and Outputs

? JEDEC Approved Byte-wide Pinout

? Industrial Temperature Ranges

? Green (Pb/Halide-free) Packaging Option Only