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BL-C4435

LEDGaAsP/GaPHi-EffRedLowpowerconsumption.

BRIGHT

寧波步來特電器有限公司

BL-C4435

STANDARDLEDLAMPS

YSTONEYellow Stone Corp

早安股份早安股份有限公司

BL-C4435

STANDARDLEDLAMPS(CYLINDRICALTYPES)

YSTONEYellow Stone Corp

早安股份早安股份有限公司

BLM4435

P-ChannelEnhancementModePowerMOSFET

BellingSHANGHAI BELLING CO., LTD.

上海貝嶺上海貝嶺股份有限公司

CEM4435

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-8A,RDS(ON)=20m?@VGS=-10V. RDS(ON)=35m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-8A,RDS(ON)=20m?@VGS=-10V. RDS(ON)=33m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4435A

P-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CEM4435A

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?LoadSwitch ?BatterySwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

CEM4435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-8A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=33mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM4435A

P-channelEnhancementModePowerMOSFET

Features ?VDS=-30V,ID=-9A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

CET4435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-8.8A,RDS(ON)=24m?@VGS=-10V. RDS(ON)=35m?@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET4435A

P-Channel35V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitches,AdaptorSwitch -NotebookPCs

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

CET4435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-8.8A,RDS(ON)=24mW@VGS=-10V. RDS(ON)=35mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM4435AJPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT8Ampere FEATURE *Smallflatpackage.(SO-8) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHM4435AZPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT8.8Ampere FEATURE *Smallflatpackage.(SC-73/SOT-223) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CJD4435

P-Channel30-V(D-S)MOSFET

ZPSEMI

ZP Semiconductor

CJD4435

P-Channel30-V(D-S)MOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJQ4435

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJQ4435

P-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJQ4435

P-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

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7906200
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21+
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3780
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50000
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22+
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37440
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9990
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3378
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12580
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3325
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SOP8
39500
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更多AT4435GP供應(yīng)商 更新時間2024-11-15 10:36:00