AT49F516集成電路（IC）的存儲器規(guī)格書PDF中文資料

Description

The AT49F516 is a 5-volt only in-system programmable and erasable Flash Memory. It’s 512K of memory is organized as 32,768 words by 16 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 μA.

To allow for simple in-system reprogrammability, the AT49F516 does not require high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM.

Reprogramming the AT49F516 is performed by erasing a block of data (entire chip or main memory block) and then programming on a word by word basis. The typical word programming time is a fast 10 μs. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.

The optional 8K words boot block section includes a reprogramming write lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is permanently protected from being erased or reprogrammed.

Features

? Single Voltage Operation

– 5V Read

– 5V Reprogramming

? Fast Read Access Time - 55 ns

? Internal Program Control and Timer

? 8K Word Boot Block With Lockout

? Fast Erase Cycle Time - 10 seconds

? Word-By-Word Programming - 10 μs/Word Typical

? Hardware Data Protection

? DATA Polling For End Of Program Detection

? Small 10 x 14 VSOP Package

? Typical 10,000 Write Cycles