AT52BC1661AT中文資料愛特梅爾數(shù)據(jù)手冊PDF規(guī)格書

Description

The AT52BC1661A(T) combines a single 16-Mbit Flash and a 8-Mbit PSRAM: both of the devices are offered in a stacked 66-ball CBGA package. The devices operate at 2.7V to 3.3V in the extended temperature range.

Features

? 16-Mbit (x16) Flash and 8-Mbit PSRAM

? 2.7V to 3.3V Operating Voltage

? Low Operating Power

– 27 mA Operating Current

– 53 μA Standby Current

? Extended Temperature Range

Flash

? 2.7V to 3.3V Read/Write

? Access Time – 70 ns

? Sector Erase Architecture

– Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout

– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout

? Fast Word Program Time – 12 μs

? Suspend/Resume Feature for Erase and Program

– Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector

– Supports Reading Any Word by Suspending Programming of Any Other Word

? Low-power Operation

– 12 mA Active

– 13 μA Standby

? Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

? VPP Pin for Write Protection and Accelerated Program/Erase Operations

? RESET Input for Device Initialization

? Sector Lockdown Support

? Top/Bottom Boot Block Configuration

? 128-bit Protection Register

? Minimum 100,000 Erase Cycles

PSRAM

? 8-Mbit (512K x 16)

? 2.7V to 3.3V VCC Operating Voltage

? 70 ns Access Time

? Fully Static Operation and Tri-state Output

? ISB0