ATC100B102JT50XT

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.

ATC100B102JT50XT

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. ?TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

ATC100B102JT50XT

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features ?HighTerminalImpedancesforOptimalBroadbandPerformance ?DesignedforDigitalPredistortionErrorCorrectionSystems ?OptimizedforDohertyApplications

ATC100B102JT50XT

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

ATC100B102JT50XT

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

ATC100B102JT50XT

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

ATC100B102JT50XT

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

ATC100B102JT50XT

RF Power Field Effect Transistor

ATC100B102JT50XT

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

ATC100B102JT50XT

RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs