ATC100B240JT500XT中文資料飛思卡爾數(shù)據(jù)手冊PDF規(guī)格書

RF Power Field Effect Transistors

N- Channel Enhancement- Mode Lateral MOSFETs

Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

? Typical CW Performance: VDD= 50 Volts, IDQ= 900 mA,

Pout= 300 Watts, f = 220 MHz

Power Gain ó 25.5 dB

Drain Efficiency ó 68

? Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power

Features

? Integrated ESD Protection

? Excellent Thermal Stability

? Facilitates Manual Gain Control, ALC and Modulation Techniques

? 200°C Capable Plastic Package

? RoHS Compliant

? In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.