ATC100B8R2CT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom2110to 2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. ?TypicalSingle--Ca

ATC100B8R2CT500XT

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These32WRFpowerLDMOStransistorsaredesignedforcellularbase stationapplicationsrequiringverywideinstantaneousbandwidthcapability coveringthefrequencyrangeof1805to1880MHz. Features ?DesignedforWideInstantaneousBandwidt

ATC100B8R2CT500XT

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This38WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationsrequiringverywideinstantaneousbandwidthcapabilitycovering thefrequencyrangeof1805to1995MHz. Features ?Designedforwideinstantaneousbandwidthap

ATC100B8R2CT500XT

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This63wattasymmetricalDohertyRFpowerLDMOStransistorisdesigned forcellularbasestationapplicationsrequiringverywideinstantaneous bandwidthcapabilitycoveringthefrequencyrangeof1805to1880MHz. ?TypicalDohertySingle--Carrier

ATC100B8R2CT500XT

RF LDMOS Wideband Integrated Power Amplifiers

100B8R2CT500XT

RFPowerLDMOSTransistorHighRuggednessN--ChannelEnhancement--ModeLateralMOSFET