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ATC200B203KT50XT中文資料飛思卡爾數(shù)據(jù)手冊(cè)PDF規(guī)格書

ATC200B203KT50XT
廠商型號(hào)

ATC200B203KT50XT

功能描述

RF Power Field Effect Transistors

文件大小

1.19064 Mbytes

頁面數(shù)量

19

生產(chǎn)廠商 Freescale Semiconductor, Inc
企業(yè)簡稱

freescale飛思卡爾

中文名稱

飛思卡爾半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-24 14:50:00

ATC200B203KT50XT規(guī)格書詳情

RF Power Field Effect Transistors

N- Channel Enhancement- Mode Lateral MOSFETs

Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

? Typical CW Performance: VDD= 50 Volts, IDQ= 900 mA,

Pout= 300 Watts, f = 220 MHz

Power Gain ó 25.5 dB

Drain Efficiency ó 68

? Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power

Features

? Integrated ESD Protection

? Excellent Thermal Stability

? Facilitates Manual Gain Control, ALC and Modulation Techniques

? 200°C Capable Plastic Package

? RoHS Compliant

? In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

產(chǎn)品屬性

  • 型號(hào):

    ATC200B203KT50XT

  • 制造商:

    FREESCALE

  • 制造商全稱:

    Freescale Semiconductor, Inc

  • 功能描述:

    RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

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