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ATO25F1GB-10IB中文資料ETC數(shù)據(jù)手冊PDF規(guī)格書

ATO25F1GB-10IB
廠商型號

ATO25F1GB-10IB

功能描述

3.3V 1G-BIT Serial NAND Flash Memory with Quad SPI

文件大小

1.28187 Mbytes

頁面數(shù)量

46

生產廠商 List of Unclassifed Manufacturers
企業(yè)簡稱

ETC

中文名稱

未分類制造商

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2024-11-17 16:10:00

ATO25F1GB-10IB規(guī)格書詳情

FEATURES

GENERAL

Serial Peripheral Interface

? Mode 0 and Mode 3

Standard, Quad SPI

? Standard SPI : SCLK, CS#, SI, SO

? Quad SPI : SCLK, CS#, SIO0, SIO1,

SIO2/W#, SIO3/Hold#

Single power supply operation

? Full voltage range: 2.7V to 3.6V read, erase and program operations

Organization

? Memory Cell Array : (128M + 4M) x Bytes

? Data Register : (2048 + 64) x Bytes

Automatic Program and Erase

? Page Program : (2048 + 64) x Bytes

? Block Erase : (128K + 4K) x Bytes = 64pages

Page Read Operation

? Page Size : (2048 + 64) Bytes

? Page Read(cell array to page buffer) : 25us(Max.)

? Serial Page Access : 104MHz, 133MHz(CL=15pF)

Fast Write Cycle Time

? Program time : 200us(Typ.)

? Block Erase time : 2ms(Typ.)

Electronic Identification

? JEDEC standard 1-byte manufacturer ID and 1-byte device ID.

Copy-Back PROGRAM Operation

? Fast Page copy without external buffering

Security features

? OTP area, 16K bytes(8 pages)

Hardware Data Protection

? Program / Erase locked during Power transitions.

? W# pin works in conjunction with Status Register Bits to protect specified memory areas. Status Register Block Protection bits (BP2, BP1, BP0) in status register configure parts of memory as read-only

Data Integrity

? Endurance:100K Program/Erase Cycles

? Data Retention : 10 years

Error Management

? Internal ECC code generation

? 1bit/528byte ECC, 1NOP/528byte

Package

? 8-pad 8x6 WSON

? 16-pin SOIC 300 mil

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