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AUIRFR4105

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105

AdvancedPlanarTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFR4105

AdvancedPlanarTechnology

AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesign

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105TR

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105TRL

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105TRR

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105Z

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFR4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105ZTR

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
23+
TO252
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價(jià)
IR
22+
TO-252
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-252
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-252
7000
詢價(jià)
IR
2016+
TO263
5562
只做進(jìn)口原裝現(xiàn)貨!或訂貨!假一賠十!
 詢價(jià)
IR
22+23+
TO263
13703
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
IR
22+
TO263
25890
原裝正品現(xiàn)貨
 詢價(jià)
IR
2023+
TO263
80000
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
 詢價(jià)
IR
24+
TO263
65200
一級代理/放心采購
 詢價(jià)
IR
2021+
TO263
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
更多AUFR4105Z供應(yīng)商 更新時(shí)間2025-2-4 11:10:00

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