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AUIRF7103QTR中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

廠商型號(hào) |
AUIRF7103QTR |
功能描述 | Advanced Planar Technology Dual N Channel MOSFET |
文件大小 |
230.62 Kbytes |
頁面數(shù)量 |
13 頁 |
生產(chǎn)廠商 | International Rectifier |
企業(yè)簡稱 |
IRF |
中文名稱 | International Rectifier官網(wǎng) |
原廠標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊 | |
更新時(shí)間 | 2025-5-8 17:17:00 |
人工找貨 | AUIRF7103QTR價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
AUIRF7103QTR規(guī)格書詳情
Description
Specifically designed for Automotive applications, this cellular design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Features
? Advanced Planar Technology
? Dual N Channel MOSFET
? Low On-Resistance
? Dynamic dV/dT Rating
? 175°C Operating Temperature
? Fast Switching
? Lead-Free, RoHS Compliant
? Automotive Qualified*
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
21+ |
8SO |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
INFINEON/英飛凌 |
2021+ |
60000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價(jià) | |||
Infineon(英飛凌) |
23+ |
SO-8 |
19850 |
原裝正品,假一賠十 |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
NA |
7000 |
工廠現(xiàn)貨!原裝正品! |
詢價(jià) | ||
INFINEON |
2430+ |
SOP8 |
8540 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
Infineon(英飛凌) |
25+ |
標(biāo)準(zhǔn)封裝 |
8800 |
公司只做原裝,詳情請(qǐng)咨詢 |
詢價(jià) | ||
Infineon/英飛凌 |
21+ |
SO-8 |
6820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
IOR |
23+ |
SOP8 |
12800 |
公司只有原裝 歡迎來電咨詢。 |
詢價(jià) | ||
Infineon(英飛凌) |
24+ |
NA/ |
8735 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價(jià) | ||
Infineon(英飛凌) |
24+ |
SOP |
14548 |
原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div> |
詢價(jià) |