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AUIRF7309Q中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

AUIRF7309Q
廠商型號(hào)

AUIRF7309Q

功能描述

Advanced Planar Technology Low On-Resistance

文件大小

293.11 Kbytes

頁(yè)面數(shù)量

14 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-21 20:00:00

AUIRF7309Q規(guī)格書詳情

Description

Specifically designed for Automotive applications, this cellular design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features

Advanced Planar Technology

Low On-Resistance

Dual N and P Channel MOSFET

Dynamic dV/dT Rating

150°C Operating Temperature

Fast Switching

Lead-Free, RoHS Compliant

Automotive Qualified*

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Infineon(英飛凌)
23+
NA/
8735
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Infineon
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SOP8
30
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23+
SO-8
25000
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Infineon/英飛凌
2023+
SO-8
6000
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Infineon/英飛凌
23+
SO-8
25630
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Infineon/英飛凌
21+
SO-8
6000
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23+
SOP8
7350
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23+
NA
20094
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IR
SOP8
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SO-8
6820
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