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AUIRF9Z34N中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

AUIRF9Z34N
廠商型號(hào)

AUIRF9Z34N

功能描述

AUTOMOTIVE GRADE Advanced Planar Technology

文件大小

247.18 Kbytes

頁面數(shù)量

11

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-25 20:00:00

AUIRF9Z34N規(guī)格書詳情

Description

Specifically designed for Automotive applications, this cellular design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features

? Advanced Planar Technology

? P-Channel MOSFET

? Dynamic dV/dT Rating

? 175°C Operating Temperature

? Fast Switching

? Fully Avalanche Rated

? Repetitive Avalanche Allowed up to Tjmax

? Lead-Free, RoHS Compliant

? Automotive Qualified*

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