首頁(yè) >AUIRFR024N>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AUIRFR024N | Low On-Resistance | etc2List of Unclassifed Manufacturers etc未分類(lèi)制造商etc2未分類(lèi)制造商 | etc2 | |
AUIRFR024N | Low On-Resistance | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
AUIRFR024N | Advanced Planar Technology | IRF International Rectifier | IRF | |
Advanced Planar Technology | IRF International Rectifier | IRF | ||
Advanced Planar Technology | IRF International Rectifier | IRF | ||
Advanced Planar Technology | IRF International Rectifier | IRF | ||
LowOn-Resistance | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
AdvancedPlanarTechnology | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
AdvancedPlanarTechnologyLowOn-ResistanceFullyAvalancheRated Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
AdvancedPlanarTechnologyLowOn-ResistanceFullyAvalancheRated Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRF International Rectifier | IRF | ||
AdvancedPlanarTechnologyLowOn-ResistanceFullyAvalancheRated Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
AUIRFR024N
- 功能描述:
MOSFET AUTO 55V 1 N-CH HEXFET 75mOhms
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
TO-252AA |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
IR |
24+ |
TO-252 |
100 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
Infineon Technologies |
23+ |
SOT-252 |
13000 |
15年原裝正品企業(yè) |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
TO-252 |
9908 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
Infineon |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190 |
詢價(jià) | ||
IR |
18+ |
TO-252 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
PJ |
23+ |
SOT23-6 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
IR |
11+PBF |
TO-252 |
100 |
優(yōu)勢(shì) |
詢價(jià) | ||
Infineon(英飛凌) |
2112+ |
DPAK |
105000 |
3000個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng) |
詢價(jià) |
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