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AUIRFR4105ZTRL中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書
AUIRFR4105ZTRL規(guī)格書詳情
Description
Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
產(chǎn)品屬性
- 型號：
AUIRFR4105ZTRL
- 功能描述：
MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
21+ |
DPAK |
6000 |
原裝現(xiàn)貨正品 |
詢價(jià) | ||
Infineon Technologies |
24+ |
D-Pak |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
Infineon |
2023 |
6200 |
公司原裝現(xiàn)貨/支持實(shí)單 |
詢價(jià) | |||
INTERNATIONALRECTIFIER |
22+ |
N/A |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價(jià) | ||
INTERNATIONALRECTIFIER |
23+ |
NA |
25630 |
原裝正品 |
詢價(jià) | ||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Infineon/英飛凌 |
2022+ |
DPAK |
48000 |
只做原裝,原裝,假一罰十 |
詢價(jià) | ||
Infineon/英飛凌 |
21+ |
DPAK |
6820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
Infineon/英飛凌 |
2023+ |
DPAK |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
DPAK |
25000 |
原裝正品,假一賠十! |
詢價(jià) |
