首頁 >AUIRLL014NTR>規(guī)格書列表
零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
AUIRLL014NTR | HEXFET? Power MOSFET | IRF International Rectifier | IRF | |
AUIRLL014NTR | AUTOMOTIVE GRADE | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRF International Rectifier | IRF | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRF International Rectifier | IRF | ||
SchottkyBarrierDiode | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | ZOWIE | ||
InductiveSensors | BalluffBalluff Korea Ltd. 巴魯夫巴魯夫集團(tuán) | Balluff |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
24+ |
標(biāo)準(zhǔn)封裝 |
16048 |
原廠渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開票。 |
詢價(jià) | ||
INFINEON/英飛凌 |
24+ |
210494 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | |||
INFINEON/英飛凌 |
20+ |
SOT-223 |
120000 |
原裝正品 可含稅交易 |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
25650 |
新到現(xiàn)貨,只做原裝進(jìn)口 |
詢價(jià) | |||
INFINEON英飛 |
24+ |
SOT-223 |
12000 |
原裝 |
詢價(jià) | ||
INFINOEN |
24+ |
SOT-223-4 |
90000 |
一級(jí)代理進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理 |
詢價(jià) | ||
Infineon Technologies |
21+ |
SOT-223 |
2500 |
進(jìn)口原裝!長期供應(yīng)!絕對(duì)優(yōu)勢價(jià)格(誠信經(jīng)營)!! |
詢價(jià) | ||
Infineon |
1931+ |
N/A |
1870 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
INFINEON/英飛凌 |
2447 |
SMD |
100500 |
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
IR |
21+ |
SOT-223 |
30000 |
百域芯優(yōu)勢 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價(jià) |
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