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PTVS17VP1UP

Marking:B1;Package:SOD128;600 W Transient Voltage Suppressor

1.1Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltage protection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Automotiveapplic

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PTVS17VP1UP-Q

Marking:B1;Package:SOD128;600 W Transient Voltage Suppressor

1.Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatleadSurface- MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotection. 2.Featuresandbenefits ?Ratedpeakpulsepower:PPPM=600W ?Reversestandoffvolta

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PTVS54VS1UR

Marking:B1;Package:SOD123W;400 W Transient Voltage Suppressor

1.1Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflat leadlow-profileSurface-MountedDevice(SMD)plasticpackage,designedfortransient overvoltageprotection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Auto

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PTVS54VS1UR-Q

Marking:B1;Package:SOD123W;400 W Transient Voltage Suppressor

1.Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotection. 2.Featuresandbenefits ?Ratedpeakpulsepower:PPPM=400W(350Wfor3V3) ?Reve

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PUMB11

Marking:B1;Package:TSSOP6;PNP/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

1.Generaldescription PNP/PNPdoubleResistor-EquippedTransistor(RET)inaverySOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. NPN/PNPcomplement:PUMD3 NPN/NPNcomplement:PUMH11 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Sim

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PUMB11-Q

Marking:B1;Package:TSSOP6;PNP/PNP resistor-equipped double transistors; R1 = 10 kΩ, R2 = 10 kΩ

1.Generaldescription PNP/PNPResistor-EquippedTransistors(RET)inaverySOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reduces

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

TLV707185PDQNR

Marking:B1;Package:X2SON;TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1Features ?Typicalaccuracy:0.5 ?Supports200-mAoutput ?LowIQ:25μA ?Fixed-outputvoltagecombinationspossiblefrom 0.85Vto5.0V(1) ?HighPSRR: –70dBat100Hz –50dBat1MHz ?Stablewitheffectivecapacitanceof0.1μF(2) ?Thermalshutdownandovercurrentprotection

TITexas Instruments

德州儀器美國德州儀器公司

TLV707185PDQNR

Marking:B1;Package:X2SON;TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1Features ?Typicalaccuracy:0.5 ?Supports200-mAoutput ?LowIQ:25μA ?Fixed-outputvoltagecombinationspossiblefrom 0.85Vto5.0V(1) ?HighPSRR: –70dBat100Hz –50dBat1MHz ?Stablewitheffectivecapacitanceof0.1μF(2) ?Thermalshutdownandovercurrentprotection

TI1Texas Instruments

德州儀器

TLV707185PDQNT

Marking:B1;Package:X2SON;TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1Features ?Typicalaccuracy:0.5 ?Supports200-mAoutput ?LowIQ:25μA ?Fixed-outputvoltagecombinationspossiblefrom 0.85Vto5.0V(1) ?HighPSRR: –70dBat100Hz –50dBat1MHz ?Stablewitheffectivecapacitanceof0.1μF(2) ?Thermalshutdownandovercurrentprotection

TI1Texas Instruments

德州儀器

TLV707185PDQNT

Marking:B1;Package:X2SON;TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1Features ?Typicalaccuracy:0.5 ?Supports200-mAoutput ?LowIQ:25μA ?Fixed-outputvoltagecombinationspossiblefrom 0.85Vto5.0V(1) ?HighPSRR: –70dBat100Hz –50dBat1MHz ?Stablewitheffectivecapacitanceof0.1μF(2) ?Thermalshutdownandovercurrentprotection

TITexas Instruments

德州儀器美國德州儀器公司

晶體管資料

  • 型號:

    B10

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-P+R

  • 性質(zhì):

    表面帖裝型 (SMD)_差分放大器射極輸出 (Dual)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    50V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    6

  • 可代換的型號:

    IMB10A,

  • 最大耗散功率:

  • 放大倍數(shù):

  • 圖片代號:

    H-23

  • vtest:

    50

  • htest:

    999900

  • atest:

    0.1

  • wtest:

    0

詳細參數(shù)

  • 型號:

    B1

  • 制造商:

    Square D by Schneider Electric

  • 功能描述:

    THERMAL UNIT

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更多B1供應(yīng)商 更新時間2025-3-31 9:30:00