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B1185

Plastic-Encapsulated Transistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

B1185

Power Transistor (-60V, -3A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1760/2SD1864/2SD1762. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

CEB1185

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED1185

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED1185

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 800V,3.4A,RDS(ON)=2.9W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF1185

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP1185

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP1185

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU1185

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU1185

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 800V,3.4A,RDS(ON)=2.9W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號：

    B1185

  • 制造商：

    HAKKO Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
KA
23+
TO-220
11000
全新原裝
 詢價
ROM
24+
TO-220
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
ROHM/羅姆
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ROHM
TO-220F
50000
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
KA
23+
SOT23-5
5177
現(xiàn)貨
 詢價
ROM
2023+環(huán)?，F(xiàn)貨
TO-220
10000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價
ROHM
23+
TO-220
4000
正品原裝貨價格低
 詢價
ROHM/羅姆
23+
NA/
81
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
ROHM
2023+
TO-220
8700
原裝現(xiàn)貨
 詢價
ROHM/羅姆
24+
TO-220F
1500
原裝正品,歡迎來電咨詢!
 詢價
更多B1185供應(yīng)商 更新時間2025-2-4 14:02:00

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