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B11NM60FD

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40? ■HIGHdv/dtANDAVALANCHECA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

B11NM60FD

N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

D11NM60N

N-channel600V-0.37ohm-10A-TO-220-TO-220FP-IPAK-DPAKSecondgenerationMDmeshPowerMOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

F11NM60N

N-channel600V-0.37ohm-10A-TO-220-TO-220FP-IPAK-DPAKSecondgenerationMDmeshPowerMOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P11NM60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

P11NM60FD

N-channel30V-0.014ohm-45ATO-220-TO-220FP-D2PAKSTripFETIIpowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P11NM60FD

N-channel600V-0.40OHM-11A-TO-220/TO-220FP/D2PAK/I2PAKFDmeshTMPowerMOSFET(withfastdiode)

DESCRIPTION TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40? ■HIGHdv/dtANDAVALANCHECA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P11NM60FD

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

P11NM60FDFP

N-channel600V-0.40OHM-11A-TO-220/TO-220FP/D2PAK/I2PAKFDmeshTMPowerMOSFET(withfastdiode)

DESCRIPTION TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40? ■HIGHdv/dtANDAVALANCHECA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P11NM60FP

N-channel650VTJmax-0.4OHM-11ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P11NM60N

N-channel600V-0.37ohm-10A-TO-220-TO-220FP-IPAK-DPAKSecondgenerationMDmeshPowerMOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P11NM60N

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STB11NM60

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB11NM60

N-channel650VTJmax-0.4OHM-11ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB11NM60

N-CHANNEL600V-0.4ohm-11ATO-220/TO-220FP/D2PAK/I2PAKMDmesh??owerMOSFET

Description TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB11NM60FD

N-channel600V-0.40OHM-11A-TO-220/TO-220FP/D2PAK/I2PAKFDmeshTMPowerMOSFET(withfastdiode)

DESCRIPTION TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40? ■HIGHdv/dtANDAVALANCHECA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB11NM60FD

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB11NM60FD

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STB11NM60FD

N-channel30V-0.014ohm-45ATO-220-TO-220FP-D2PAKSTripFETIIpowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB11NM60N

N-channel600V-0.37廓-10A-TO-220-TO-220FP-I2PAK-IPAKDPAK-D2PAKsecondgenerationMDmesh??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    B11NM60

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET(with fast diode)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
VBSEMI/臺(tái)灣微碧
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
VBsemi
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
VBsemi
21+
TO263
10065
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
VBsemi
2214+
TO263
3590
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
VBsemi
24+
TO263
9000
只做原裝正品 有掛有貨 假一賠十
詢價(jià)
VBsemi
23+
TO263
10000
原裝正品現(xiàn)貨
詢價(jià)
ST/進(jìn)口原
17+
TO-262
6200
詢價(jià)
ST/進(jìn)口原
24+
TO-262
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
ST
20+
TO-262
38560
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
ST/意法
23+
NA/
3300
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
更多B11NM60供應(yīng)商 更新時(shí)間2025-1-7 9:48:00