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D11NM60N

N-channel600V-0.37ohm-10A-TO-220-TO-220FP-IPAK-DPAKSecondgenerationMDmeshPowerMOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

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F11NM60N

N-channel600V-0.37ohm-10A-TO-220-TO-220FP-IPAK-DPAKSecondgenerationMDmeshPowerMOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

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P11NM60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

P11NM60FD

N-channel30V-0.014ohm-45ATO-220-TO-220FP-D2PAKSTripFETIIpowerMOSFET

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P11NM60FD

N-channel600V-0.40OHM-11A-TO-220/TO-220FP/D2PAK/I2PAKFDmeshTMPowerMOSFET(withfastdiode)

DESCRIPTION TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40? ■HIGHdv/dtANDAVALANCHECA

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P11NM60FD

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

P11NM60FDFP

N-channel600V-0.40OHM-11A-TO-220/TO-220FP/D2PAK/I2PAKFDmeshTMPowerMOSFET(withfastdiode)

DESCRIPTION TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40? ■HIGHdv/dtANDAVALANCHECA

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P11NM60FP

N-channel650VTJmax-0.4OHM-11ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P11NM60N

N-channel600V-0.37ohm-10A-TO-220-TO-220FP-IPAK-DPAKSecondgenerationMDmeshPowerMOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P11NM60N

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STB11NM60

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB11NM60

N-channel650VTJmax-0.4OHM-11ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET

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STB11NM60

N-CHANNEL600V-0.4ohm-11ATO-220/TO-220FP/D2PAK/I2PAKMDmesh??owerMOSFET

Description TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption

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STB11NM60FD

N-channel600V-0.40OHM-11A-TO-220/TO-220FP/D2PAK/I2PAKFDmeshTMPowerMOSFET(withfastdiode)

DESCRIPTION TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40? ■HIGHdv/dtANDAVALANCHECA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB11NM60FD

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB11NM60FD

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STB11NM60FD

N-channel30V-0.014ohm-45ATO-220-TO-220FP-D2PAKSTripFETIIpowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB11NM60N

N-channel600V-0.37廓-10A-TO-220-TO-220FP-I2PAK-IPAKDPAK-D2PAKsecondgenerationMDmesh??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

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STB11NM60N

N-channel600V,0.37廓,10AMDmesh??IIPowerMOSFETTO-220,TO-220FP,I2PAK,IPAK,DPAK,D2PAK

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB11NM60N

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST/進(jìn)口原
17+
TO-262
6200
詢價(jià)
ST/進(jìn)口原
24+
TO-262
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
ST
20+
TO-262
38560
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票
詢價(jià)
ST/意法
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
ST
08+
TO-262
50
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
ST/意法
23+
NA/
3300
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
N/A
23+
TO-263
1761
專業(yè)優(yōu)勢(shì)供應(yīng)
詢價(jià)
DLZ
22+
TO-263
354000
詢價(jià)
JST/日壓
22+
連接器
261140
代理-優(yōu)勢(shì)-原裝-正品-現(xiàn)貨*期貨
詢價(jià)
JST
21+
N/A
100000
專注連接器,連接一切可能
詢價(jià)
更多B11NM60N供應(yīng)商 更新時(shí)間2025-1-9 9:28:00