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STB12NK80Z	文件：342.58 Kbytes Page：15 Pages	N-CHANNEL800V-0.65OHM-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESHPowerMOSFET Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH?technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH?layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedtoe	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STB12NK80Z	文件：522.929 Kbytes Page：16 Pages	N-channel800V-0.65廓-10.5A-TO-220-D2PAK-TO-247Zener-ProtectedSuperMESH??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STB12NK80Z	文件：151.86 Kbytes Page：3 Pages	N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH??owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
STB12NK80Z	文件：151.86 Kbytes Page：3 Pages	N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH??owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
STB12NK80Z	文件：151.86 Kbytes Page：3 Pages	N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH??owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
STB12NK80Z	文件：346.27 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
STB12NK80Z-S	文件：212.89 Kbytes Page：9 Pages	N-CHANNEL800V-0.65ohm-10.5AI2SPAKZener-ProtectedSuperMESHPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STF12NK80Z	文件：319.7 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
STF12NK80Z	文件：695.11 Kbytes Page：22 Pages	N-channel800V,0.65Ωtyp.,10.5AZener-protectedSuperMESH?PowerMOSFETinD2PAK,TO-220FP,TO-220andTO-247 Features ■Extremelyhighdv/dtcapability ■Improvedesdcapability ■100avalanchetested ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Verygoodmanufacturingreliability Applications ■Switchingapplications Description ThesedevicesareN-channelZener-protected Pow	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP12NK80Z	文件：522.929 Kbytes Page：16 Pages	N-channel800V-0.65廓-10.5A-TO-220-D2PAK-TO-247Zener-ProtectedSuperMESH??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP12NK80Z	文件：151.86 Kbytes Page：3 Pages	N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH??owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
STP12NK80Z	文件：151.86 Kbytes Page：3 Pages	N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH??owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
STP12NK80Z	文件：151.86 Kbytes Page：3 Pages	N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH??owerMOSFET N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
STP12NK80Z	文件：342.58 Kbytes Page：15 Pages	N-CHANNEL800V-0.65OHM-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESHPowerMOSFET Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH?technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH?layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedtoe	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP12NK80Z	文件：332.85 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive,	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
STP12NK80Z	文件：695.11 Kbytes Page：22 Pages	N-channel800V,0.65Ωtyp.,10.5AZener-protectedSuperMESH?PowerMOSFETinD2PAK,TO-220FP,TO-220andTO-247 Features ■Extremelyhighdv/dtcapability ■Improvedesdcapability ■100avalanchetested ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Verygoodmanufacturingreliability Applications ■Switchingapplications Description ThesedevicesareN-channelZener-protected Pow	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP12NK80Z	文件：373.23 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
STW12NK80Z	文件：352.63 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
STW12NK80Z	文件：368.64 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive,	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
STW12NK80Z	文件：695.11 Kbytes Page：22 Pages	N-channel800V,0.65Ωtyp.,10.5AZener-protectedSuperMESH?PowerMOSFETinD2PAK,TO-220FP,TO-220andTO-247 Features ■Extremelyhighdv/dtcapability ■Improvedesdcapability ■100avalanchetested ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Verygoodmanufacturingreliability Applications ■Switchingapplications Description ThesedevicesareN-channelZener-protected Pow	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市科恒偉業(yè)電子有限公司	B12NK80Z	ST	2018+	TO263	6528	只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	B12NK80Z	ST/意法	23+	TO-262	5000	原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	B12NK80Z	ST	23+	TO263	7300	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	B12NK80Z	ST	23+	TO263	7300	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	B12NM50	ST/進(jìn)口原	17+	TO-263	6200		詢價(jià)
深圳兆威電子有限公司	B12NM50	ST	23+	TO263	80	原裝房間現(xiàn)貨假一賠十	詢價(jià)
深圳市盈宏半導(dǎo)體科技有限公司	B12NM50	ST	0545+PB	TO263	80	剛到現(xiàn)貨加微13425146986	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	B12NM50	ST	20+	TO-263	38560	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	B12NM50	ST/意法	23+	TO-263	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市威雅利發(fā)展有限公司	B12NM50	ST	0849+	TO-263	1600	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)

更多B12NK80Z供應(yīng)商更新時(shí)間2025-1-18 15:58:00

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