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BAX280

FREDDiode(VRRM1000VIFRMS5.5A55nsSoftrecoverycharacteristics)

FREDDiode PreliminaryData ●VRRM1000V ●IFRMS5.5A ●trr55ns ●Softrecoverycharacteristics

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFP280

NPNSiliconRFTransistor(Forlownoise,low-poweramplifiersinmobilecommunicationsystems)

NPNSiliconRFTransistor ?Forlownoise,low-poweramplifiersinmobile communicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8mA ?fT=7,5GHz F=1.5dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFP280T

SiliconNPNPlanarRFTransistor

Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFP280TRW

SiliconNPNPlanarRFTransistor

Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFP280TW

SiliconNPNPlanarRFTransistor

Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFP280W

NPNSiliconRFTransistor(Forlownoise,low-poweramplifiersinmobilecommunicationsystems)

NPNSiliconRFTransistor ?Forlownoise,low-poweramplifiersinmobile communicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8mA ?fT=7,5GHz F=1.5dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFR280

NPNSiliconRFTransistor

NPNSiliconRFTransistor ?Forlownoise,low-poweramplifiersinmobilecommunicationssystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8m ?fT=7.5GHz F=1.5dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR280

NPNSiliconRFTransistor(Forlownoise,low-poweramplifiersinmobilecommunicationsystems)

NPNSiliconRFTransistor ?Forlownoise,low-poweramplifiersinmobilecommunicationssystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8m ?fT=7.5GHz F=1.5dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFR280T

SiliconNPNPlanarRFTransistor

Features ?Lowpowerapplications ?Lownoisefigure ?Hightransitionfrequency Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR280TW

SiliconNPNPlanarRFTransistor

Features ?Lowpowerapplications ?Lownoisefigure ?Hightransitionfrequency Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR280W

NPNSiliconRFTransistor

NPNSiliconRFTransistor ?Forlownoise,low-poweramplifiersinmobilecommunicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8m ?fT=7.5GHz F=1.5dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR280W

NPNSiliconRFTransistor(Forlownoise,low-poweramplifiersinmobilecommunicationsystems

NPNSiliconRFTransistor ?Forlownoise,low-poweramplifiersinmobilecommunicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8m ?fT=7.5GHz F=1.5dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFY280

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,lowpoweramplifiersatcollectorcurrentsfrom0.2mAto8mA ?Hermeticallysealedmicrowavepackage ?fT=7.2GHz,F=2.5dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BGY280

UHFamplifiermodule

DESCRIPTION TheBGY280isapoweramplifiermoduleinaSOT559Aleadlesspackagewithaplasticcap.Thedimensionsare13.75x11x1.7mm.Themoduleconsistsoftwoseparatedline-ups.OneforGSM900andoneforGSM1800.Internalpowercontrol,inputandoutputmatching. FEATURES ?Dualband

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BMA280

Digital,triaxialaccelerationsensor

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

BMA280

Digital,triaxialaccelerationsensor

boschBosch Sensortec GmbH

博世博世半導(dǎo)體

BME280

Combinedhumidityandpressuresensor

boschBosch Sensortec GmbH

博世博世半導(dǎo)體

BMP280

DigitalPressureSensor

boschBosch Sensortec GmbH

博世博世半導(dǎo)體

BR280

Cutler-Hammer

Features,Benefits andFunctions n BothBRandCHtypebranchcircuit breakerstylesavailable. n MeetslatestNECwirebending spacerequirements. n Slottedsealingscrewsathubwith sealingprovisionprovided. n Surfaceunitsaresuppliedwith mountingtabs. n Semi-flushunitsar

EATONEaton All Rights Reserved.

伊頓伊頓公司

BSP280

IGBTTransistor(NchannelMOSinputvoltage-controlledHighswitchspeedVerylowtailcurrent)

IGBTTransistor PreliminaryData ●VCE1000V ●IC2.5A ●Nchannel ●MOSinput(voltage-controlled) ●Highswitchspeed ●Verylowtailcurrent ●Latch-upfree ●SuitablefreewheelingdiodeBAX280

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

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    B280R

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供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
DIODES/美臺
23+
SMB
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
DIODES/美臺
23+
12000
詢價(jià)
DIODES/美臺
24+
DO-214AA
98000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
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DIODES/美臺
23+
SOD-123
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
詢價(jià)
DBLECTRO
23+
原廠原包
29960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
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更多B280R供應(yīng)商 更新時(shí)間2025-1-1 9:48:00