零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS60V RDSON(MAX.)37mΩ ID20A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=37A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=32mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP37N06LTissup | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel60V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Logic-LevelGateDrive ?FastSwitching ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=37A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=32mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-Channel60-V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP37N06LTissup | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP37N06LTissup | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
EMC |
16+ |
TO252 |
2500 |
全新原裝現(xiàn)貨 |
詢價 | ||
EMC |
2020+ |
TO252 |
350000 |
100%進口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
EMC |
23+ |
TO252 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
EMC |
23+ |
TO252 |
7000 |
詢價 | |||
17 |
24+ |
TO-252 |
3000 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
E |
22+ |
SOT-252 |
6000 |
十年配單,只做原裝 |
詢價 | ||
EMC/杰力 |
24+ |
SOT-252 |
3670 |
原裝正品,歡迎來電咨詢! |
詢價 | ||
HKC/香港晶體 |
19+ |
MODOULE |
1427 |
原裝現(xiàn)貨 |
詢價 | ||
M/A-COM |
23+ |
原廠正規(guī)渠道 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
TI |
23+ |
20000 |
現(xiàn)貨庫存 |
詢價 |
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