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IRF9230

TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF

International Rectifier

IRF9230

-5.5Aand-6.5A,-150Vand-200V,0.8and1.2Ohm,P-ChannelPowerMOSFETs

Description ThesedevicesareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedfor

Intersil

Intersil Corporation

IRF9230

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRF9230

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRFE9230

P-CHANNELPOWERMOSFET

VDSS-200V ID(cont)-3.6A RDS(on)0.825? FEATURES ?SURFACEMOUNT ?SMALLFOOTPRINT ?HERMETICALLYSEALED ?DYNAMICdv/dtRATING ?AVALANCHEENERGYRATING ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT

SEME-LAB

Seme LAB

IRFE9230

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

BVDSS-200V RDS(on)0.80? ID-4.0A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedt

IRF

International Rectifier

IRFE9230

SimpleDriveRequirements

IRF

International Rectifier

IRFF9230

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9230

-4.0A,-200V,0.800Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFF9230

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

200V,P-CHANNEL TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance.TheHEXFET

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
NS
24+
DIP
3600
絕對原裝!現(xiàn)貨熱賣!
 詢價
原廠正品
23+
DIP
5000
原裝正品,假一罰十
 詢價
N/A
24+
LCC
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！
 詢價
N/A
QQ咨詢
LCC
64
全新原裝 研究所指定供貨商
 詢價
NS
DIP
56520
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
BOTHHAND
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
BOTHHAND/帛漢
2021+
DIP/SOP
16500
十年專營原裝現(xiàn)貨,假一賠十
 詢價
進口
23+
TO-220
8890
價格優(yōu)勢、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢
 詢價
SAYNO
24+
TO-92
1600
詢價
SANYO
23+
2800
正品原裝貨價格低
 詢價
更多B9230供應商 更新時間2025-4-11 16:08:00

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