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BAP63-03

SiliconPINdiode

DESCRIPTION PlanarPINdiodeinaSOD323smallSMDplasticpackage. FEATURES ?HighspeedswitchingforRFsignals ?Lowdiodecapacitance ?Lowdiodeforwardresistance ?Verylowseriesinductance ?Forapplicationsupto3GHz. APPLICATIONS ?RFattenuatorsandswitches.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BAP63-03

SiliconPINdiode

DESCRIPTION PlanarPINdiodeinaSOD323smallSMDplasticpackage. FEATURES ?HighspeedswitchingforRFsignals ?Lowdiodecapacitance ?Lowdiodeforwardresistance ?Verylowseriesinductance ?Forapplicationsupto3GHz. APPLICATIONS ?RFattenuatorsandswitches.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

BAP63-03

SiliconPINdiode

DESCRIPTION PlanarPINdiodeinaSOD323smallSMDplasticpackage. FEATURES ?HighspeedswitchingforRFsignals ?Lowdiodecapacitance ?Lowdiodeforwardresistance ?Verylowseriesinductance ?Forapplicationsupto3GHz. APPLICATIONS ?RFattenuatorsandswitches.

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

BAP63-03

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BAR63-03

SiliconPINDiode(PINdiodeforhighspeedswitchingofRFsignalsLowforwardresistanceVerylowcapacitanceForfrequenciesupto3GHz)

●PINdiodeforhighspeedswitchingofRFsignals ●Lowforwardresistance ●Verylowcapacitance ●Forfrequenciesupto3GHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BAR63-03W

SiliconPINDiodes

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BAR63-03W

SiliconPINDiodes

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BAR63-03W

SiliconPINDiodes

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BAR63-03W

SiliconPINDiodes

●PINdiodeforhighspeedswitchingofRFsignals ●Verylowforwardresistance(lowinsertionloss) ●Verylowcapacitance(highisolation) ●Forfrequenciesupto3GHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BAR63-03W

SiliconPINDiode(PINdiodeforhighspeedswitchingofRFsignalsLowforwardresistanceVerylowcapacitanceForfrequenciesupto3GHz)

●PINdiodeforhighspeedswitchingofRFsignals ●Lowforwardresistance ●Verylowcapacitance ●Forfrequenciesupto3GHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
8000
只做原裝現(xiàn)貨
詢價
INFINEON
23+
7000
詢價
INFINEON/英飛凌
23+
SOD-323
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
INFINEON/英飛凌
24+
SOD-323
9000
原裝現(xiàn)貨假一賠十
詢價
INFINEON/英飛凌
22+
SOD-323
354000
詢價
INFINEON/英飛凌
22+
SOD-323
50000
原裝正品.假一罰十
詢價
INFINEON/英飛凌
SOD-323
22+
7127
原裝正品現(xiàn)貨 可開增值稅發(fā)票
詢價
NEXPERIA/安世
23+
12000
詢價
INFINEON
24+
SOT-323
6200
新進(jìn)庫存/原裝
詢價
INFINEON
23+
SOT-23
7750
全新原裝優(yōu)勢
詢價
更多BAR63-03WG供應(yīng)商 更新時間2025-1-27 15:02:00