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BAS116VY-Q中文資料安世數(shù)據(jù)手冊(cè)PDF規(guī)格書
廠商型號(hào) |
BAS116VY-Q |
功能描述 | Low-leakage triple switching diode |
絲印標(biāo)識(shí) | 2J |
封裝外殼 | TSSOP6 |
文件大小 |
203.46 Kbytes |
頁(yè)面數(shù)量 |
8 頁(yè) |
生產(chǎn)廠商 | Nexperia B.V. All rights reserved |
企業(yè)簡(jiǎn)稱 |
NEXPERIA【安世】 |
中文名稱 | 安世半導(dǎo)體(中國(guó))有限公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-1-16 18:32:00 |
BAS116VY-Q規(guī)格書詳情
1. General description
Epitaxial, medium-speed switching, electrically isolated triple diode in an ultra small SOT363
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
? Low leakage current: max. 5 nA
? Switching time: typical 0.8 μs
? Continuous reverse voltage: maximum 75 V
? Repetitive peak reverse voltage: maximum 85 V
? Repetitive peak forward current: maximum 500 mA
? Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
? Low-leakage current applications in surface mounted circuits
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PANJIT |
19+ |
800 |
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SOT-323 |
63000 |
原裝正品現(xiàn)貨 |
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XX |
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XX |
22+ |
SOD323 |
72500 |
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詢價(jià) | ||
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860000 |
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詢價(jià) | ||
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23+ |
NA/ |
3000 |
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詢價(jià) |