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BB-2302

InsulKrimp??Piggyback Quick Disconnect, Tab 6.35mm (.250) by 0.81mm (.032),14-16 AWG, Blue Insulator, Tape

MOLEX4Molex Electronics Ltd.

莫仕

BB-2302T

InsulKrimp??Piggyback Quick Disconnect, Tab 6.35mm (.250) by 0.81mm (.032),14-16 AWG, Blue Insulator, Tape

MOLEX4Molex Electronics Ltd.

莫仕

BC2302

Plastic-EncapsulateMOSFETS

Description TheBC2302usesadvancedtrenchtechnologytoprovideexcellentR lowgatechargeandoperationwithgatevoltagesaslowas2.5V. ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. DS(ON), Application Batteryprotection Loadswitch Uni

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BC2302ET

N-ChannelMOSFET

Feature ?20VN-ChannelMOSFETHighDenseDesign. ?RDS(ON)=280m?(typ.)@VGS=4.5V ?RDS(ON)=360m?(typ.)@VGS=2.5V ?ReliableandRugged ?ESDProtected Applications ?PortableEquipmentandBatteryPowerSystems

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BC2302W

Plastic-EncapsulateMOSFETS

FEATURE ?TrenchFETPowerMOSFET APPLICATIONS ?LoadSwitchforPortableDevices ?DC/DCConverter

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BLM2302

N-ChannelEnhancementModePowerMOSFET

BellingSHANGHAI BELLING CO., LTD.

上海貝嶺上海貝嶺股份有限公司

BM2302

N-Channel1.25-W,2.5-VMOSFET

booklyBookly Micro electronic

百力微電子上海百力微電子股份有限公司

BU2302

CRtimer

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BU2302F

CRtimer

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

CES2302

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,3.0A,RDS(ON)=72mΩ@VGS=4.5V. RDS(ON)=110mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2302

N-Channel20V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverters ?LoadSwitchforPortableApplications

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CES2302A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,4.4A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHT2302PT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT2.8Ampere FEATURE *Smallsurfacemountingtype.(SC-59/SOT-346) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *

CHENMKOchenmko

力勤股份有限公司

CHT2302WPT

N-ChannelEnhancementModeFieldEffectTransistor

CHENMKOchenmko

力勤股份有限公司

CJ2302

N-ChannelEnhancementModeMOSFET

ZPSEMI

ZP Semiconductor

CJ2302

N-Channel20-V(D-S)MOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CJ2302S

SOT-23Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJ2302S

N-Channel20-V(D-S)MOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CM2302

T-13/4Bi-PinBase(.125)

T-13/4Bi-PinBase(.125)

CML

Chicago Miniature Lamp,inc

CM2302

T-13/4Bi-PinBase(.125)

CML

Chicago Miniature Lamp,inc

詳細(xì)參數(shù)

  • 型號(hào)：

    BB-2302

  • 制造商：

    Molex

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