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BB301

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301C

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301CAW-TL-E

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301M

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301MAW-TL-E

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BC301

PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

NPNSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

MICRO-ELECTRONICS

Micro Electronics

BC301

SmallSignalTransistors

CentralCentral Semiconductor Corp

美國中央半導體

詳細參數(shù)

  • 型號：

    BB301

  • 制造商：

    HITACHI

  • 制造商全稱：

    Hitachi Semiconductor

  • 功能描述：

    Build in Biasing Circuit MOS FET IC UHF RF Amplifier

供應商型號品牌批號封裝庫存備注價格
NEC
SOT-143
68500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
HITACHI
23+
SO-8
5177
現(xiàn)貨
 詢價
HITACHI
24+
SOT-143
6000
原裝現(xiàn)貨假一罰十
 詢價
RENESAS瑞薩/HITACHI日立
24+
SOT-143SOT-23-4
12200
新進庫存/原裝
 詢價
HITACHI
2016+
SOT-143
5000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
RENESAS
24+
SOT343
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
RENESAS
1742+
SOT-143
98215
只要網上有絕對有貨!只做原裝正品!
 詢價
SOT-143
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
Hitachi
25+23+
Sot-143
27592
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
RENESAS
23+
SOT-143
63000
原裝正品現(xiàn)貨
 詢價
更多BB301供應商 更新時間2025-4-14 16:21:00

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