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BB302C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

HitachiHitachi Semiconductor

日立日立公司

BB302M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

HitachiHitachi Semiconductor

日立日立公司

BB302M

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB302MBW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BC302

PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

NPNSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

MICRO-ELECTRONICS

Micro Electronics

BC302

SmallSignalTransistors

CentralCentral Semiconductor Corp

美國中央半導體

BC302

BipolarNPNDeviceinaHermeticallysealedTO39

SEME-LAB

Seme LAB

BC302

NPNEPITAXIALPLANARSILICONTRANSISTORS

NPNEPITAXIALPLANARSILICONTRANSISTORS NPNSILICONLOW-AND-MEDIUMPOWERTRANSISTORS.

CDIL

Continental Device India Limited

BC302

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES ?InputπFilter ?FullyRegulatedOutputs ?IndustryStandardPinouts ?5,12,24,28,and48VDCInputs ?RippleandNoiseLessThan50mVpp ?Input/OutputIsolation

ETCList of Unclassifed Manufacturers

未分類制造商

BD302

iscSiliconPNPPowerTransistor

DESCRIPTION ?DCCurrentGain-:hFE=30(Min.)@IC=-3A ?Collector-EmitterBreakdownVoltage-:V(BR)CEO=-45V(Min.) ?ComplementtoTypeBD301 APPLICATIONS ?Designedforaudiooutputstagesupto25W,verticaldeflectioncircuitsincolorTVreceivers.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
HITACHI
24+
50000
詢價
RENESAS/瑞薩
23+
71830
原廠授權代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價
RENESAS/瑞薩
23+
SOT143
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS/瑞薩
2022
SOT143
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
RENESAS
23+
SOT143
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
 詢價
RENESAS/瑞薩
23+
NA/
3367
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
RENESAS/瑞薩
25+
SOT143
3367
原裝正品,假一罰十!
 詢價
RENESAS/瑞薩
25+
SOT143
3367
原裝正品,假一罰十!
 詢價
Eaton
22+
NA
168
加我QQ或微信咨詢更多詳細信息,
 詢價
JAPAN
1922+
SOT23
6598
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價
更多BB302C供應商 更新時間2025-3-14 16:30:00

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