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零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

BC212BG

AmplifierTransistorsPNPSilicon

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BC212C

PNPPlasticEncapsulatedTransistor

FEATURE GeneralPurposeSwitchingandAmplification.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BC212CSM

BipolarPNPDeviceinaHermeticallysealedLCC1

SEME-LAB

Seme LAB

BC212DCSM

DualBipolarPNPDevicesinahermeticallysealed

SEME-LAB

Seme LAB

BC212L

PNPGeneralPurposeAmplifier

PNPGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto300mA.SourcedfromProcess68.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BC212L

COMPLEMENTARYSILICONPLANAREPITAXIALTRANSISTOR

BC182BC182L->PNP BC212,BC212L->PNP

MICRO-ELECTRONICS

Micro Electronics

BC212L

SILICONPLANAREPITAXIALTRANSISTORS

PNPSILICONPLANAREPITAXIALTRANSISTORS AmplifierTransistors

CDIL

Continental Device India Limited

BC212L

LowLevelandGeneralPurposeAmplifiers

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

BC212LA

SILICONPLANAREPITAXIALTRANSISTORS

PNPSILICONPLANAREPITAXIALTRANSISTORS AmplifierTransistors

CDIL

Continental Device India Limited

BC212LB

PNPGeneralPurposeAmplifier

?Thisdeviceisdesignedforgeneralpurposeamplifierapplicationat collectorcurrentsto100mA. ?Sourcedfromprocess68

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BC212LB

SILICONPLANAREPITAXIALTRANSISTORS

PNPSILICONPLANAREPITAXIALTRANSISTORS AmplifierTransistors

CDIL

Continental Device India Limited

BCL-212-WP

CompressionStyleRingTongueTerminalfor2AWGWire,StudSize1/2,Un-PlatedWidePad

MOLEX4Molex Electronics Ltd.

莫仕

BCL-212-WP

CompressionStyleRingTongueTerminal

MOLEX4Molex Electronics Ltd.

莫仕

BCL-212-WP-PL

CompressionStyleRingTongueTerminal

MOLEX4Molex Electronics Ltd.

莫仕

BGY212

UHFamplifiermodule

DESCRIPTION TheBGY212Aisathree-stageUHFamplifiermoduleinaSOT482Cleadlesspackagewithaplasticcover.ThemoduleconsistsofoneNPNsiliconplanartransistordieandonebipolarmonolithicintegratedcircuitmountedtogetherwithmatchingandbiascircuitcomponentsonametallizedc

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BGY212A

UHFamplifiermodule

DESCRIPTION TheBGY212Aisathree-stageUHFamplifiermoduleinaSOT482Cleadlesspackagewithaplasticcover.ThemoduleconsistsofoneNPNsiliconplanartransistordieandonebipolarmonolithicintegratedcircuitmountedtogetherwithmatchingandbiascircuitcomponentsonametallizedc

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BH212

BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL

ADAM-TECHAdam Technologies, Inc.

亞當(dāng)科技亞當(dāng)科技股份有限公司

BRS212

Breakoverdiodes

GENERALDESCRIPTION Arangeofbidirectional,breakoverdiodesinatwoterminal,surfacemounting,plasticenvelope.Thesedevicesfeaturecontrolledbreakovervoltageandhighholdingcurrenttogetherwithhighpeakcurrenthandlingcapability.Theirintendedapplicationisprotectionoflineb

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BTA212

Threequadranttriacsguaranteedcommutation

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BTA212

Threequadranttriacshighcommutation

GENERALDESCRIPTION GlasspassivatedhighcommutationtriacsinaplasticenvelopeintendedforuseincircuitswherehighstaticanddynamicdV/dtandhighdI/dtcanoccur.Thesedeviceswillcommutatethefullratedrmscurrentatthemaximumratedjunctiontemperature,withouttheaidofasnubber

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號(hào):

    BC212B_Q

  • 功能描述:

    兩極晶體管 - BJT PNP -50V -100mA HFE/4

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

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CJ
2023+
80000
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5000
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2500
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23+
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50000
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ON/安森美
2022
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80000
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2500
正規(guī)渠道,只有原裝!
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ON Semiconductor
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
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更多BC212B_Q供應(yīng)商 更新時(shí)間2025-1-11 13:30:00