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BGR269

200MHz,35dBgainreverseamplifier

Generaldescription HighperformanceamplifierinaSOT115Jpackage,operatingatavoltagesupplyof24V(DC). Featuresandbenefits ■Excellentlinearity ■Siliconnitridepassivation ■Ruggedconstruction ■Goldmetallizationensuresexcellentreliability ■35dBamplificationupto200

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BGR269

HybridCATVamplifiermodule

DESCRIPTION Highperformanceamplifieroperatingatavoltagesupplyof24VDCinaSOT115Jpackage. FEATURES ?Extremelylownoise ?Excellentlinearity ?Siliconnitridepassivation ?Ruggedconstruction ?Goldmetallizationensuresexcellentreliability. APPLICATIONS ?Reverseamplifi

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BGR269

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BTS-EL269S

GuardsagainstaccidentaldisconnectionofComputers,PDU’s,ServersandmostNetworkDevices.

BURLAND

Burland Technology Solutions

BY269

SiliconMesaRectifiers

FEATURES ?Glasspassivatedjunction ?Hermeticallysealedpackage ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Highvoltagefastrectificationdiode?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BY269

FastAvalancheSinterglassDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BY269

0.8AFASTRECOVERYHIGHVOLTAGEGLASSBODYRECTIFIER

Features ●HermeticallySealedGlassBodyConstruction ●HighVoltageto1800VwithLowLeakage ●SurgeOverloadRatingto20APeak

DIODES

Diodes Incorporated

BY269

FastAvalancheSinterglassDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BY269

FastAvalancheSinterglassDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BY269

FastAvalancheSinterglassDiode

Features ?Glasspassivatedjunction ?Hermeticallysealedpackag Applications Highvoltagefastrectificationdiode

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

晶體管資料

  • 型號(hào):

    BC269(B,C)

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    通用型 (Uni)_低噪放大 (ra)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    30V

  • 最大電流允許值:

    0.5A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    BC338,BC378,BC635,BC738,BC838,3DG3B,

  • 最大耗散功率:

    0.375W

  • 放大倍數(shù):

  • 圖片代號(hào):

    D-8

  • vtest:

    30

  • htest:

    999900

  • atest:

    0.5

  • wtest:

    0.375

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QuectelWirelessSolutions
21+
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12588
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2004
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1880
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23+
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50000
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23+
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6500
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QUECTELWIRELESS
23+
NA
12730
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
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移遠(yuǎn) Quectel
2112+
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250個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)
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6000
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更多BC269(B,C)供應(yīng)商 更新時(shí)間2025-1-22 15:48:00