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BC556BG

AmplifierTransistorsPNPSilicon

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BC556BG

AmplifierTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BC556BTA

SwitchingandAmplifier

Features ?SwitchingandAmplifier ?High-Voltage:BC556,VCEO=-65V ?Low-Noise:BC559,BC560 ?ComplementtoBC546,BC547,BC548,BC549,andBC550

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BC556BTA

PNPEpitaxialSiliconTransistor

Features ?SwitchingandAmplifier ?High-Voltage:BC556,VCEO=-65V ?Low-Noise:BC559,BC560 ?ComplementtoBC546,BC547,BC548,BC549,andBC550

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BC556BTA

PNPEpitaxialSiliconTransistor

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BC556BTF

PNPEpitaxialSiliconTransistor

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BC556BTF

PNPEpitaxialSiliconTransistor

Features ?SwitchingandAmplifier ?High-Voltage:BC556,VCEO=-65V ?Low-Noise:BC559,BC560 ?ComplementtoBC546,BC547,BC548,BC549,andBC550

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BC556BTFR

PNPEpitaxialSiliconTransistor

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BC556BTFR

PNPEpitaxialSiliconTransistor

Features ?SwitchingandAmplifier ?High-Voltage:BC556,VCEO=-65V ?Low-Noise:BC559,BC560 ?ComplementtoBC546,BC547,BC548,BC549,andBC550

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BC556C

ElektronischeBauelemente

FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.1A Collector-basevoltage VCBO:BC556-80V BC557-50V BC558-30V Operatingandstoragejunctiontemp

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BC556C

PNPSiliconPlanarEpitaxialTransistors

RECTRON

Rectron Semiconductor

BC556C

GeneralPurposePNPTransistors

Diotec

Diotec Semiconductor

BC556XBK

GeneralPurposeSi-EpitaxialPlanarTransistors

Diotec

Diotec Semiconductor

BF556A

N-channelsiliconjunctionfield-effecttransistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES ?Lowleakagelevel(typ.500fA) ?Highgain ?Lowcut-offvoltage. APPLICATIONS ?Impedanceconvertersine.g.electretmicrophonesand infra-reddetectors ?VHFamplifiersinos

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF556A

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BF556B

N-channelsiliconjunctionfield-effecttransistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES ?Lowleakagelevel(typ.500fA) ?Highgain ?Lowcut-offvoltage. APPLICATIONS ?Impedanceconvertersine.g.electretmicrophonesand infra-reddetectors ?VHFamplifiersinos

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF556B

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BF556C

N-channelsiliconjunctionfield-effecttransistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES ?Lowleakagelevel(typ.500fA) ?Highgain ?Lowcut-offvoltage. APPLICATIONS ?Impedanceconvertersine.g.electretmicrophonesand infra-reddetectors ?VHFamplifiersinos

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF556C

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BS-A556RD

SINGLEDIGITLEDDISPLAYS

ETCList of Unclassifed Manufacturers

未分類制造商

詳細參數(shù)

  • 型號:

    BC556B T/R

  • 功能描述:

    兩極晶體管 - BJT TRANS GP TAPE RADIAL

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應商型號品牌批號封裝庫存備注價格
NXP
2339+
N/A
21322
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
PH
22+
NA
30000
原裝現(xiàn)貨假一罰十
詢價
NXP USA Inc.
24+
TO-226-3 TO-92-3(TO-226AA)
9350
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
詢價
PHI
22+
DIPTO-92AMMO
10000
原裝正品優(yōu)勢現(xiàn)貨供應
詢價
IR
23+
原廠封裝
5177
現(xiàn)貨
詢價
長電/長晶
2231+
TO-92
14747
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
長電/長晶
24+
TO-92
9000
只做原裝正品 有掛有貨 假一賠十
詢價
LTN
05+
原廠原裝
18051
只做全新原裝真實現(xiàn)貨供應
詢價
PHI&NBSP
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現(xiàn)貨
詢價
PHI&NBSP
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現(xiàn)貨
詢價
更多BC556B T/R供應商 更新時間2025-1-12 14:02:00