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BC846BS

65V,100mANPN/NPNgeneral-purposetransistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BC846BS

NPNGENERALPURPOSETRANSISTORS

NPNGENERALPURPOSETRANSISTORS VOLTAGE45/65VoltsPOWER150mWatts FEATURES ?Generalpurposeamplifierapplications ?NPNepitaxialsilicon,planardesign ?CollectorcurrentIC=100mA ?IncompliancewithEURoHS2002/95/ECdirectives

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BC846BS

DualNPNSmallSignalTransistor200mW

Features ?LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?IdeallySuitedforAutomaticInsertion ?Ultra-SmallSurfaceMountPackage ?ForSwitchingandAFAmplifierAp

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BC846BS

DualNPNSmallSignalTransistor200mW

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BC846BS

NPNPlasticEncapsulateTransistor

FEATURES ?Ideallysuitedforautomaticinsertion ?ForSwitchingandAFAmplifierApplications

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BC846BS

NPNgeneralpurposeTransistor

FEATURES ●Highcurrentgain. ●ExcellenthFElinearity. ●Lownoisebetween30Hzand15kHz. ●ForAFinputstagesanddriverapplications. APPLICATIONS ●Generalpurposeswitchingandamplification.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

BC846BS

65V,100mANPN/NPNgeneral-purposetransistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC846BSH

65V,100mANPN/NPNgeneral-purposedoubletransistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?High-temperatureapplicationsupto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC846BSH-Q

65V,100mANPN/NPNgeneral-purposedoubletransistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?High-temperatureapplicationsupto175°C ?QualifiedaccordingtoA

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC846BS-Q

65V,100mANPN/NPNgeneral-purposetransistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotive

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC846BT

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinanSC-75plasticpackage. PNPcomplements:BC856TandBC857T. FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V). APPLICATIONS ?Generalpurposeswitchingandamplification,especially inportablecommunicationequipment ?Electronicdataproce

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BC846BT

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC846BT

SURFACEMOUNTNPNSILICONTRANSISTOR

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

BC846B-TP

NPNPlastic-EncapsulateTransistors

ETCList of Unclassifed Manufacturers

未分類制造商

BC846BW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors ?Powerdissipation200mW ?PlasticcaseSOT-323 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreeled

Diotec

Diotec Semiconductor

BC846BW

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC846BW

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features ?IdeallySuitedforAutomaticInsertion ?ComplementaryPNPTypes:BC856W–BC858W ?ForSwitchingandAFAmplifierApplications ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.GreenDevice(Note3) ?QualifiedtoAEC-Q101Standardsfor

DIODES

Diodes Incorporated

BC846BW

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSC70;SOT323plasticpackage. PNPcomplements:BC856WandBC857W. FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V). APPLICATIONS ?Generalpurposeswitchingandamplification.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BC846BW

NPNSiliconAFTransistor(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

SIEMENSSiemens Ltd

西門子德國西門子股份公司

BC846BW

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon PbLead(Pb)-Free

WEITRON

Weitron Technology

詳細(xì)參數(shù)

  • 型號:

    BC846BRTA

  • 功能描述:

    兩極晶體管 - BJT -

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
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6051
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KEC
23+
SOT-23
8560
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2020+
SOT-23
80000
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22+
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15659
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2023+
SOT-23
80000
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KEC
21+
SOT-23
120000
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23+
SOT-23
50000
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更多BC846BRTA供應(yīng)商 更新時間2024-11-2 10:32:00