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BC847CW-TP

NPNGeneralPurposeTransistors

Features ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V) ?CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BC847DG

45V,100mANPNgeneral-purposetransistors

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BC847DS

45V,100mANPN/NPNgeneral-purposetransistor

Generaldescription NPN/NPNgeneral-purposetransistorpairinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plasticpackage. Features ■Lowcollectorcapacitance ■Lowcollector-emittersaturationvoltage ■Closelymatchedcurrentgain ■Reducesnumberofcomponentsandboardspace ■

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BC847DS

45V,100mANPN/NPNgeneral-purposetransistor

Features *Lowcollectorcapacitance *Lowcollector-emittersaturationvoltage *Closelymatchedcurrentgain *Reducesnumberofcomponentsandboardspace *Nomutualinterferencebetweenthetransistors *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC847E

GeneralPurposeTransistors

FS

First Silicon Co., Ltd

BC847F

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. PNPcomplements:BC856F,BC857FandBC858Fseries. FEATURES ?PowerdissipationcomparabletoSOT23 ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V). APPLICATIONS ?Generalpurposeswitching

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BC847F

NPNSiliconTransistor(GeneralpurposeapplicationSwitchingapplication)

Descriptions ?Generalpurposeapplication ?Switchingapplication Features ?Highvoltage:VCEO=45V ?ComplementarypairwithBC857F

AUK

AUK corp

BC847M

NPNgeneralpurposetransistors

DESCRIPTION NPNgeneralpurposetransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:BC857Mseries. FEATURES ?Leadlessultrasmallplasticpackage(1mm×0.6mm×0.5mm) ?Boardspace1.3×0.9mm ?PowerdissipationcomparabletoSOT23. APPLICATIONS ?Generalpu

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BC847PN

COMPLEMENTARYPAIRSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?EpitaxialDieConstruction ?TwoInternallyIsolatedNPN/PNPTransistorsinOnePackage ?IdealforMediumPowerAmplificationandSwitching ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.GreenDevi

DIODES

Diodes Incorporated

BC847PN

NPN/PNPSiliconAFTransistorArray

NPN/PNPSiliconAFTransistorArrays ?ForAFinputstageanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Two(galvanic)internalisolatedNPN/PNP transistorinonepackage ?Pb-free(RoHScompliant)package ?QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC847PN

COMPLEMENTARYPAIRSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

BC847PN

ComplementarySurfaceMountGeneralPurposeSi-PlanarTransistors

Features TwocomplementarytransistorsinonepackageGeneralPurpose ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,Switching,Amplification Commercialgrade1) MechanicalData1) Tapedandreeled3000/7“ Weightapprox.0.01

Diotec

Diotec Semiconductor

BC847PN

Multi-ChipTransistor

FEATURE ?EpitaxialDieConstruction ?TwointernalisolatedNPN/PNPtransistorsinonepackage ?PowerDissipation PCM:0.2W(Temp.=25?C) ?CollectorCurrent ICM:0.1A ?Collector-baseVoltage V(BR)CBO:50/-50V ?Operating&StorageJunctionTemperature TJ,TSTG:

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BC847PN

COMPLEMENTARYPAIRSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?EpitaxialDieConstruction ?TwoInternallyIsolatedNPN/PNPTransistorsinonepackage ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice(Notes3and4)

DIODES

Diodes Incorporated

BC847PN

PNPandNPNSmallSignalTransistor200mW

Features ?LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?IdeallySuitedforAutomaticInsertion ?Ultra-SmallSurfaceMountPackage ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Halogenfreeavailableuponr

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BC847PN

NPN/PNPSiliconAFTransistorArray(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

NPN/PNPSiliconAFTransistorArray ?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Two(galvanic)internalisolatedNPN/PNPTransistorsinonepackage

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BC847PN

SmallSurfaceMountTransistor

FEATURES ●Epitaxialplanardieconstruction. ●TwointernalisolatedNPN/PNPTransistors Inonepackage. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●Idealforlowpoweramplificationandswitching.

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

BC847PN

Plastic-EncapsulateTransistors

Features ●EpitaxialDieConstruction ●TwointernalisolatedNPN/PNPTransistorsin onepackage ●Ultra-SmallSurfaceMountPackage MechanicalData ●Case:SOT-363,MoldedPlastic ●Casematerial-ULFlammabilityRating Classification94V-0 ●Moisturesensitivity:Level1perJ-ST

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

BC847PN

DUALTRANSISTOR(NPNPNP)

DUALTRANSISTOR(NPN+PNP) FEATURES ●EpitaxialDieConstruction ●TwoisolatedNPN/PNP(BC847W+BC857W)Transistorsinonepackage

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

BC847PN

COMPLEMENTARYPAIRSMALLSIGNALTRANSISTOR

DIODES

Diodes Incorporated

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ST
23+
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16900
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ST
22+
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16900
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長(zhǎng)電
2020+
SOT-323
798000
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ON/ONSemiconductor/安森
24+
SOT-323
8700
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LRC
23+
NA
25060
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ON
16+
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10000
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NXP
24+
SOT-323
16800
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23+
SOT-323
50000
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ON/安森美
2022
SOT-323
80000
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更多BC847CWSL供應(yīng)商 更新時(shí)間2025-1-6 16:00:00