BC849S

Surface Mount General Purpose Si-Epi-Planar Double-Transistors

BC849S

SMD General Purpose Dual NPN Transistors

BC849S-B

Marking：2B；Package：SOT-23；General Purpose Transistors

GeneralPurposeTransistors NPNSilicon ?MoistureSensitivityLevel:1 ?ESDRating–HumanBodyModel:>4000V –MachineModel:>400V

BC849S-C

Marking：2C；Package：SOT-23；General Purpose Transistors

GeneralPurposeTransistors NPNSilicon ?MoistureSensitivityLevel:1 ?ESDRating–HumanBodyModel:>4000V –MachineModel:>400V

BC849T

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T

BC849W

NPNGENERALPURPOSETRANSISTORS

BC849W

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.45V). APPLICATIONS ?Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

BC849W

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forgeneralpurposeandswitchingapplications

BC849W

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

BC849W

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)