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BC857BDW

Plastic-Encapsulate Transistors

FEATURES Twotransistorsinonepackage Reducesnumberofcomponentsandboardspace Nomutualinterferencebetweenthetransistors

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BC857BDW

Dual General Purpose Transistors

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

BC857BDW1T1

Dual General Purpose Transistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT?363/SC?88whichisdesignedforlowpowersurfacemountapplications. ?DeviceMarking: BC856BDW1T1=3B BC857BDW1T1=3F BC857CDW1T1=3G

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BC857BDW1T1

Dual General Purpose Transistors(PNP Duals)

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

BC857BDW1T1

Dual General Purpose Transistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

BC857BDW1T1G

Dual General Purpose Transistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT?363/SC?88whichisdesignedforlowpowersurfacemountapplications. Features ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSCompli

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BC857BDW1T1G

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BC857BDW1T1G

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BC857BF

PNPSiliconAFTransistor

PNPSiliconAFTransistor ?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Lownoisebetween30Hzand15kHz ?Complementarytypes:BC847BF,BC848BFBC849BF,BC850BF(NPN)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC857BF

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. NPNcomplements:BC846F,BC847FandBC848Fseries. FEATURES ?PowerdissipationcomparabletoSOT23 ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V). APPLICATIONS ?Generalpurposeswitching

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BC857BF

PNPSiliconAFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC857BFA

45VPNPSMALLSIGNALTRANSISTOR

DIODES

Diodes Incorporated

BC857BFZ

45VPNPSMALLSIGNALTRANSISTORINDFN0606

Features BVCEO>-45V IC=-100mAHighCollectorCurrent PD=925mWPowerDissipation 0.36mm2PackageFootprint,40SmallerthanDFN1006 0.4mmHeightPackageMinimizingOff-BoardProfile ComplementaryNPNTypeBC847BFZ TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAnti

DIODES

Diodes Incorporated

BC857B-HF

GeneralPurposeTransistor

GeneralPurposeTransistor RoHSDevice HalogenFree Features ???????-Ideallysuitedforautomaticinsertion -Powerdissipation PCM:0.25W(@TA=25°C) -Lowcurrent.(max.100mA) -Collector-basevoltage VCBO:BC856=-80V BC857=-50V BC858=-30V

COMCHIPComchip Technology

典琦典琦科技股份有限公司

BC857BHZG

PNPGeneralpurposetransistor

Features 1)BVCEO>45V(IC=1mA) 2)ComplementstheBC847BHZG Application AUDIOFREQUENCYSMALLSIGNALAMPLIFIER

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BC857BL

GENERALPURPOSETRANSISTORSPNPSILICON

DESCRIPTION The BC856857858859ALBL/CLareavailablein SOT23package FEATURES ?MoistureSensitivityLevel:1 ?ESDRatingHumanBodyModel:>4000V MachineModel:>400 V ?AvailableinSOT23package

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

BC857BLP

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?BVCEO>-45V ?IC=-100mAHighCollectorCurrent ?PD=1000mWPowerDissipation ?0.60mm2PackageFootprint,13timesSmallerthanSOT23 ?0.5mmHeightPackageMinimizingOff-BoardProfile ?ComplementaryNPNTypeBC847BLP ?TotallyLead-Free&FullyRoHSCompliant(Notes1

DIODES

Diodes Incorporated

BC857BLP

50VPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

BC857BLP

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

BC857BM

45V,100mANPNgeneral-purposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V). APPLICATIONS ?Generalpurposeswitchingandamplification.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號：

    BC857BDW

  • 功能描述：

    兩極晶體管 - BJT 100mA 50V Dual PNP

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
NXP
24+
SC-88SOT-363
9000
詢價(jià)
23+
17ROHS
3002
原裝正品--可開增值稅發(fā)票量大可訂貨
 詢價(jià)
原裝
20+
原裝
56200
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
Bychip/百域芯
21+
SOT-363
30000
實(shí)單必成 質(zhì)強(qiáng)價(jià)優(yōu) 可開13點(diǎn)增值稅
 詢價(jià)
KEFAN/科范微
23+
SOT-363
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
KEFAN/科范微
2022
SOT-363
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
ST先科
SOT-363
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
ON
23+
SMD
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
ON
17ROHS
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
KEFAN/科范微
23+
NA/
120000
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
更多BC857BDW供應(yīng)商 更新時(shí)間2025-1-15 16:30:00

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