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BD116

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BTS116

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL116

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULD116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULT116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BYV116

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dualschottkyrectifierdiodesintendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV116seriesissuppliedintheSOT78(TO220AB)conventionalleadedpackage. TheBYV116BseriesissuppliedintheSOT404surfacemountingp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BYV116B

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dualschottkyrectifierdiodesintendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV116seriesissuppliedintheSOT78(TO220AB)conventionalleadedpackage. TheBYV116BseriesissuppliedintheSOT404surfacemountingp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

CDM-A116

16-Channel5VAnalogInputModule

BenefitsandFeatures Abilitytomakesimultaneousmeasurements CANbus2.0A/2.0Bcapable;contactCampbellScientificfordetails TechnicalDescription TheCDM-A116offers24-bitsigma-deltaAdcwith16userprogrammablenotchfrequenciesfrom30,000Hzto2.5Hz,including50and60Hz.P

CAMPBELL

Campbell Scientific United Kingdom

CDST116-G

SMDSwitchingDiode

Features -Lowleakagecurrentapplications. -Mediumspeedswitchingtimes.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    BCR116F

  • 制造商：

    INFINEON

  • 制造商全稱：

    Infineon Technologies AG

  • 功能描述：

    NPN Silicon Digital Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
24+
TSFP-3
366000
新進(jìn)庫(kù)存/原裝
 詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
INFIEON
24+
TSFP-3
2987
絕對(duì)全新原裝現(xiàn)貨供應(yīng)!
 詢價(jià)
Infineon
23+
SOT0402
3200
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售
 詢價(jià)
INFINEON
23+
TSFP-3
8000
只做原裝現(xiàn)貨
 詢價(jià)
INFINEON
24+
TSFP-3
12000
原裝現(xiàn)貨假一罰十
 詢價(jià)
TSFP-3
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務(wù)
 詢價(jià)
Infineon Technologies
2022+
PG-TSFP-3
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
更多BCR116F供應(yīng)商 更新時(shí)間2025-4-26 16:30:00

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