| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BD128 | SILICON NPN PLANAR POWER TRANSISTORS SiliconNPNPlanarPowerTransistors Features: ●Highreversevoltage ●Powerdissipation17.5W Application:Generalathighsupplyvoltages | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | |
HDMIInterfaceESDProtection | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SiliconNPNtransistorinaTO-220PlasticPackage. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
NPNDSERIESTRANSISTORS | SISEMICShenzhen SI Semiconductors Co.,LTD. 深愛(ài)半導(dǎo)體深圳深愛(ài)半導(dǎo)體股份有限公司 | SISEMIC | ||
SiliconNPNtransistorinaTO-220PlasticPackage. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
NPNDSERIESTRANSISTORS | SISEMICShenzhen SI Semiconductors Co.,LTD. 深愛(ài)半導(dǎo)體深圳深愛(ài)半導(dǎo)體股份有限公司 | SISEMIC | ||
SiliconNPNtransistorinaTO-252PlasticPackage. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
NPNDSERIESTRANSISTORS | SISEMICShenzhen SI Semiconductors Co.,LTD. 深愛(ài)半導(dǎo)體深圳深愛(ài)半導(dǎo)體股份有限公司 | SISEMIC | ||
N-channelenhancementmodeverticalD-MOStransistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES ?DirectinterfacetoC-MOS,TTL,etc. ?High-speedswitching | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
BipolarNPNDeviceinaHermeticallysealedTO3 | SEME-LAB Seme LAB | SEME-LAB | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
HighVoltageFast-SwitchingNPNPowerTransistor DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi | SUNTAC Suntac Electronic Corp. | SUNTAC | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign | TGS Tiger Electronic Co.,Ltd | TGS | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitchmodepowersupplies. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed ·Integratedantiparallelcollector-emitterdiode APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisd | TGS Tiger Electronic Co.,Ltd | TGS | ||
SiliconNPNPowerTransistor EATURES ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed DESCRIPTION ·Designedforuseinlightingapplicationsandlowcost switch-modepowersupplies. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscSiliconNPNPowerTransistor DESCRIPTION ?Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ?LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ?VeryHighSwitchingSpeed APPLICATIONS ?Designedforelectronicballastsforfluorescentlighting. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
低頻或音頻放大 （LF）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
350V
- 最大電流允許值：
0.5A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號(hào)：
BD157,BD232,BD410,3DK205G,
- 最大耗散功率：
17.5W
- 放大倍數(shù)：
- 圖片代號(hào)：
B-21
- vtest：
350
- htest：
999900
- atest：
0.5
- wtest：
17.5
詳細(xì)參數(shù)
- 型號(hào)：
BD128
- 功能描述：
SILICON NPN PLANAR POWER TRANSISTORS
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
PHI |
1738+ |
TO-126 |
8529 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價(jià) | ||
NEXPERIA/安世 |
23+ |
SOT404 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
NXP/恩智浦 |
23+ |
TO-126 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
NXP/恩智浦 |
22+ |
TO-126 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
NXP/恩智浦 |
22+ |
TO-126 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
NXP/恩智浦 |
22+ |
TO-126 |
90883 |
詢價(jià) | |||
NXP |
24+ |
TO-126 |
37650 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
DAITRON |
10+ |
TSOP |
2255 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) | ||
DAITRON |
17+ |
TSOP |
9988 |
只做原裝進(jìn)口,自己庫(kù)存 |
詢價(jià) | ||
DAITRON |
23+ |
TSOP |
5000 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳 |
詢價(jià) |
