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BD180G

PlasticMediumPowerSiliconPNPTransistor

3.0AMPERESPOWERTRANSISTORSPNPSILICON80VOLTS,30WATTS Thisdeviceisdesignedforusein5.0to10Wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features ?DCCurrentGain?hFE=40(Min)@IC=0.15Adc ?BD180iscomplementarywi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BD180PNP

EPITAXIALSILICONPOWERTRANSISTORS

BD175,177,179NPNPLASTICPOWERTRANSISTORS BD176,178,180PNPPLASTICPOWERTRANSISTORS MediumPowerLinerandSwitchingApplications

CDIL

Continental Device India Limited

BF180

NPNTRANZYSTORY

[ADVANIOERLIKON] TELEVISION/VIDEODEVICES I.F./R.F.amplifiersandoscillators V.H,F./U.H.F.TVtuningdevices

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

BF180

GeneralPurposeDiodes

GeneralPurposeDiodes

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BF180

Electricalcharacterlitics

GeneralPurposeDiodes

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BFP180

NPNSiliconRFTransistor(Forlow-poweramplifiersinmobilecommunicationsystemspageratcollectorcurrentsfrom0.2to2.5mA)

NPNSiliconRFTransistor ?Forlow-poweramplifiersinmobilecommunicationsystems(pager)atcollectorcurrentsfrom0.2to2.5mAfT=7GHz ?F=2.1dBat900MHz

SIEMENSSiemens Ltd

西門(mén)子德國(guó)西門(mén)子股份公司

BFP180W

NPNSiliconRFTransistor(Forlow-poweramplifiersinmobilecommunicationsystemspageratcollectorcurrentsfrom0.2to2.5mA)

NPNSiliconRFTransistor ?Forlow-poweramplifiersinmobilecommunicationsystems(pager)atcollectorcurrentsfrom0.2to2.5mAfT=7GHz ?F=2.1dBat900MHz

SIEMENSSiemens Ltd

西門(mén)子德國(guó)西門(mén)子股份公司

BFP180W

NPNSiliconRFTransistor

NPNSiliconRFTransistor ●Forlow-poweramplifierinmobilecommunicationsystems(pager)atcollectorcurrentsfrom0.2mAto2.5mAfT=7GHz ●F=2.1dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR180

NPNSiliconRFTransistor(Forlow-poweramplifiersinmobilecommunicationsystemspageratcollectorcurrentsfrom0.2mAto2.5mA)

NPNSiliconRFTransistor ?Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA ?fT=7GHz F=2.1dBat900MHz

SIEMENSSiemens Ltd

西門(mén)子德國(guó)西門(mén)子股份公司

BFR180

NPNSiliconRFTransistor

NPNSiliconRFTransistor ?Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA ?fT=7GHz F=2.1dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR180W

NPNSiliconRFTransistor(Forlow-poweramplifiersinmobilecommunicationsystemspageratcollectorcurrentsfrom0.2mAto2.5mA)

NPNSiliconRFTransistor ?Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA ?fT=7GHz F=2.1dBat900MHz

SIEMENSSiemens Ltd

西門(mén)子德國(guó)西門(mén)子股份公司

BFR180W

NPNSiliconRFTransistor

NPNSiliconRFTransistor ?Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA ?fT=7GHz F=2.1dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY180

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductorForlowpoweramplifiersatcollectorcurrentsfrom0.2to2.5mA)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0.2to2.5mA ?Hermeticallysealedmicrowavepackage ?fT=6.5GHz,F=2.6dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Ltd

西門(mén)子德國(guó)西門(mén)子股份公司

BFY180

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY180ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY180H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY180P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY180S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. ?Hermeticallysealedmicrowavepackage ?fT=6,5GHzF=2.6dBat2GHz ?eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BMA180

Digital,triaxialaccelerationsensor

boschBosch Sensortec GmbH

博世博世半導(dǎo)體

BMC180

Idealforuseinelectricvehicleschargingprotectionboards

CONQUER

Conquer Electronics Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào):

    BD180/D

  • 功能描述:

    Plastic Medium Power Silicon PNP Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD/仙童
23+
TO-126
10000
公司只做原裝正品
詢價(jià)
FAIRCHILD/仙童
TO-126
22+
6000
十年配單,只做原裝
詢價(jià)
FAIRCHILD/仙童
23+
TO126
28888
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道。可提供大量庫(kù)存,詳
詢價(jià)
ON Semiconductor
2022+
TO-126-3
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
詢價(jià)
Fairchild
23+
33500
詢價(jià)
FAIRCHILD/仙童
22+
TO-126
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
詢價(jià)
FAIRCHILD
24+
TO-126
12300
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
ON
24+
TO-225
8866
詢價(jià)
ON
11+
180
原裝正品長(zhǎng)期供貨,如假包賠包換 徐小姐13714450367
詢價(jià)
ON
23+
TO-225
7824
全新原裝
詢價(jià)
更多BD180/D供應(yīng)商 更新時(shí)間2024-11-17 14:30:00