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BD235

Plastic-Encapsulated Transistors

TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

TEL

TRANSYS Electronics Limited

BD235

NPN power transistors

Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypesareBD236andBD238respectively. Features ■NPNtransistors Applications ■Audio,

STMICROELECTRONICSSTMicroelectronics

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BD235

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeBD234/236/238 APPLICATIONS ?Formediumpowerlinearandswitchingapplications

SAVANTIC

Savantic, Inc.

BD235

Low voltage NPN power transistors

Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypeisBD238. Features ■Lowsaturationvoltage ■NPNtransistors Applications ■Audio,

STMICROELECTRONICSSTMicroelectronics

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BD235

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeBD234/236/238 APPLICATIONS ?Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD235

TO-126 Plastic-Encapsulate Transistors

FEATURES ComplementtoBD234/BD236/BD238respectively

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BD235

TRANSISTOR (NPN)

FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltage V(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

BD235

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIALSILICONPOWERTRANSISTORS IntendedforuseinMediumPowerLinearSwitchingApplications

CDIL

Continental Device India Limited

BD235

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features ComplementarypairwithBD236. Applications Mediumpowerlinearandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

BD235

Silicon NPN Power Transistor

DESCRIPTION ?DCCurrentGain-:hFE=40(Min)@lc=0.15A ?ComplementtoTypeBD234/236/238 APPLICATIONS ?Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD235

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheBD235andBD237aresiliconepitaxial-baseNPNpowertransistorsinJedecSOT-32plasticpackageintededforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareBD236andBD238respectively. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

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BD235

Medium Power Linear and Switching Applications

MediumPowerLinearandSwitchingApplications ?ComplementtoBD234/236/238respectively

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BD235

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BD235

NPN Epitaxial Planar Transistors

NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

BD235

NPN Plastic-Encapsulate Transistors

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?PowerDissipation:PCM=1.25W,Ta=25°C ?CollectorCurrent:IC=2A ?ComplementtoBD234/236/238respectively ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?Epoxy

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BD235

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION ?DCCurrentGain-:hFE=40(Min)@lc=0.15A ?ComplementtoTypeBD234/236/238 APPLICATIONS ?Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD235

GERMANIOVE TRANZISTORY

ETCList of Unclassifed Manufacturers

未分類制造商

BD235

COMPLEMENTARY SILICON POWER TRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BD235

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

BD235

包裝:卷帶(TR) 封裝/外殼:TO-225AA,TO-126-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS NPN 60V 2A SOT32-3

STMICROELECTRONICSSTMicroelectronics

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晶體管資料

  • 型號:

    BD235(-6...-16)

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    2A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BD177,BD377,BD439,3DD61C,

  • 最大耗散功率:

    25W

  • 放大倍數(shù):

  • 圖片代號:

    B-21

  • vtest:

    60

  • htest:

    999900

  • atest:

    2

  • wtest:

    25

產(chǎn)品屬性

  • 產(chǎn)品編號:

    BD235

  • 制造商:

    STMicroelectronics

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

  • 包裝:

    卷帶(TR)

  • 晶體管類型:

    NPN

  • 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):

    600mV @ 100mA,1A

  • 電流 - 集電極截止(最大值):

    100μA(ICBO)

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):

    25 @ 1A,2V

  • 工作溫度:

    150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-225AA,TO-126-3

  • 供應(yīng)商器件封裝:

    SOT-32-3

  • 描述:

    TRANS NPN 60V 2A SOT32-3

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ST專家
18+
TO-126
89000
全新原裝現(xiàn)貨,假一罰十
詢價(jià)
ST專家
2021+
TO-126
6800
原廠原裝,歡迎咨詢
詢價(jià)
PHI
05+
原廠原裝
1419
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
STMicro.
23+
SOT-32
7750
全新原裝優(yōu)勢
詢價(jià)
MOT
24+
50
詢價(jià)
STM
16+
原廠封裝
4000
原裝現(xiàn)貨假一罰十
詢價(jià)
ST
2020+
TO-126
3440
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
ST
24+
TO-220
10000
原裝現(xiàn)貨熱賣
詢價(jià)
ST
16+
TO126
2163
全新原裝現(xiàn)貨
詢價(jià)
QG
24+
TO-126
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
更多BD235供應(yīng)商 更新時(shí)間2024-12-22 14:36:00