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BD237

Plastic Medium Power Silicon NPN Transistor

PlasticMediumPowerSiliconNPNTransistor ...designedforusein5.0to10Wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. ?DCCurrentGain—hFE=40(Min)@IC=0.15Adc

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

BD237

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheBD235andBD237aresiliconepitaxial-baseNPNpowertransistorsinJedecSOT-32plasticpackageintededforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareBD236andBD238respectively. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

BD237

Medium Power Linear and Switching Applications

MediumPowerLinearandSwitchingApplications ?ComplementtoBD234/236/238respectively

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BD237

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BD237

NPN Epitaxial Planar Transistors

NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

BD237

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeBD234/236/238 APPLICATIONS ?Formediumpowerlinearandswitchingapplications

SAVANTIC

Savantic, Inc.

BD237

Plastic Medium Power Bipolar Transistors

PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features ?DCCurrentGain?hFE=40(Min)@IC=0.15Adc ?EpoxyMeetsUL94V0@0.125in ?ESDRatings:HumanBodyModel,3B;>

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BD237

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeBD234/236/238 APPLICATIONS ?Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BD237

Low voltage NPN power transistors

Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypeisBD238. Features ■Lowsaturationvoltage ■NPNtransistors Applications ■Audio,

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

BD237

Plastic-Encapsulated Transistors

TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

TEL

TRANSYS Electronics Limited

晶體管資料

  • 型號:

    BD237(-6...-16)

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    100V

  • 最大電流允許值:

    2A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BD179,BD379,BD441,3DD61D,

  • 最大耗散功率:

    25W

  • 放大倍數(shù):

  • 圖片代號:

    B-21

  • vtest:

    100

  • htest:

    999900

  • atest:

    2

  • wtest:

    25

產(chǎn)品屬性

  • 產(chǎn)品編號:

    BD237

  • 制造商:

    STMicroelectronics

  • 類別:

    分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 晶體管類型:

    NPN

  • 不同?Ib、Ic 時?Vce 飽和壓降(最大值):

    600mV @ 100mA,1A

  • 電流 - 集電極截止(最大值):

    100μA(ICBO)

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):

    25 @ 1A,2V

  • 工作溫度:

    150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-225AA,TO-126-3

  • 供應(yīng)商器件封裝:

    SOT-32-3

  • 描述:

    TRANS NPN 80V 2A SOT32-3

供應(yīng)商型號品牌批號封裝庫存備注價格
STM
21+
SOT-32-3 (TO-126-3)
1000
詢價
ST
24+
TO-126
36000
一級代理/全新原裝現(xiàn)貨/長期供應(yīng)!
詢價
STM
21+
SOT-32-3 (TO-126-3)
2000
原裝正品 有掛有貨
詢價
STM
21+
2000
SOT-32-3 (TO-126-3)
詢價
CJ
24+
TO-126
100
只做原裝
詢價
STM
23+
SOT-32-3 (TO-126-3)
1000
原裝現(xiàn)貨支持送檢
詢價
ST/意法半導體
2023
SOT-32-3
6000
公司原裝現(xiàn)貨/支持實單
詢價
ST/意法半導體
24+
SOT-32-3
4650
絕對原裝公司現(xiàn)貨
詢價
ST/意法
23+/24+
TO126
9865
主推型號,原裝正品,終端BOM表可配單,可開13點稅
詢價
ST MICROELETTRONICS
2425+
原廠封裝
755
原裝正品渠道可追溯
詢價
更多BD237供應(yīng)商 更新時間2025-1-21 17:30:00