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BD6086GU

Silicon Monolithic Integrated Circuit

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BD6086GU

13LEDs ALC* Flash and Illumination

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BD6086GU_11

13LEDs ALC* Flash and Illumination

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

C6086

X-RayCCDCamera

TheC6086seriesisacompact,lightweight,highresolutionX-rayCCDcamera.ItconsistsofanX-raysensitivescintillator(P43)coatedonataperedfiberopticbundledirectcoupledtoaCCDcamera.TheC6086-90cameracontrollerincorporatesa10-bitA/Dconverterforpreciseimageacquisition

HAMAMATSUHamamatsu Photonics Co.,Ltd.

濱松光子濱松光子學(xué)株式會(huì)社

C6086NL

BROADBAND:RF&WIRELESS

RF,HFC&CATVAPPLICATIONS PluseoffersacomprehensivelineofRFmagneticcomponentsforuseinwirelessandRFapplications, includingmobilecommunications,cabletelevision,hybridfiber/coax(HFC)equipment,cablemodems,set-topboxes,andhomenetworking.Thecomponentsareal

pulse

Pulse A Technitrol Company

C6086NL

DIPLEXERSFORCABLEMODEMS,SETTOPBOXESANDGATEWAYS

RF,HFC&CATVAPPLICATIONS PluseoffersacomprehensivelineofRFmagneticcomponentsforuseinwirelessandRFapplications, includingmobilecommunications,cabletelevision,hybridfiber/coax(HFC)equipment,cablemodems,set-topboxes,andhomenetworking.Thecomponentsareal

pulse

Pulse A Technitrol Company

CEB6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,70A,RDS(ON)=9.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6086

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=70A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9.2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

CEB6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,70A,RDS(ON)=9.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6086L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,72A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=13.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6086L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,72A,RDS(ON)=10mW@VGS=10V. RDS(ON)=13.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,50A,RDS(ON)=8.7mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,50A,RDS(ON)=8.7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,12A,RDS(ON)=11.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6086

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM6086L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,12A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=15mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,70A,RDS(ON)=9.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,70A,RDS(ON)=9.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6086L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,72A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=13.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6086L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,72A,RDS(ON)=10mW@VGS=10V. RDS(ON)=13.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    BD6086GU

  • 制造商:

    ROHM

  • 制造商全稱:

    Rohm

  • 功能描述:

    13LEDs ALC* Flash and Illumination

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VCSP85H4
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ROHM
2016+
BGA63
6523
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
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ROHM
2020+
VCSP85H
3744
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
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ROHM
23+
VCSP85H
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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ROHM
23+
BGA
12500
原裝環(huán)保房間現(xiàn)貨假一賠十
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ROHM
0940+
BGA
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剛到現(xiàn)貨加微13425146986
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09+
2020+
ROHM
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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ROHM
2023+
BGA63
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
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ROHM
21+
BGA63
35200
一級(jí)代理/放心采購
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ROHM/羅姆
23+
VCSP85H4
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
詢價(jià)
更多BD6086GU供應(yīng)商 更新時(shí)間2024-12-23 10:52:00